A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): ##STR00001##
where R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R.sup.2 and R.sup.3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z.sup.1 represents an integer of from 1 to 3.

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an alkoxide compound represented by the following general formula (1): ##STR00001##
where R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R.sup.2 and R.sup.3 each independently represent an alkyl group having 1 to 5 carbon atoms, and z.sup.1 represents an integer of from 1 to 3.

Methods of forming metal-containing films are provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

Methods of forming metal-containing films are provided. The methods include forming a blocking layer, for example, on a first substrate surface, by a first deposition process and forming the metal-containing film, for example, on a second substrate surface, by a second deposition process.

A raw material for forming a thin film, comprising a compound represented by General Formula (1) below. ##STR00001## wherein R.sup.1 represents an isopropyl group, R.sup.2 represents a methyl group, R.sup.3 and R.sup.4 each independently represent a linear or branched alkyl group having 1 to 5 carbon atoms, A represents a propane-1,2-diyl group and M represents copper, nickel, cobalt or manganese.