A deposition method of a metallic carbon film as use as a hard mask during a semiconductor process is provided. In detail, in order to overcome an issue in terms of patterning due to low etch selectivity when a conventional amorphous carbon layer is used as a hard mask and an issue in that the hard mask is not easily removed after etching is performed, a metallic carbon film is formed via a plasma-enhanced chemical vapor deposition (PECVD) method using a precursor containing metal and carbon to remarkably enhance etch selectivity, a grain size is reduced to amorphize the thin film so as to easily remove the hard mask after etching is performed, and relative contents of metal and carbon contained in the metallic carbon film are adjusted to remarkably lower overall internal stress of the metallic carbon film.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

This invention provides a method and a system to deposit a thin layer of very reactive metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The method is comprised of sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a high vacuum reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. The system comprising a very high efficiency H plasma source, the high vacuum reactor chamber, an anti-corrosion turbo pump and a high vacuum load lock is required for reducing contaminant gases such as O.sub.2, H.sub.2O, and CO.sub.2, and for increasing hydrogen plasma efficiency.

This invention provides a method and a system to deposit a thin layer of very reactive metals by plasma enhanced atomic layer deposition (PEALD). The very reactive metals, selected from the highly electropositive elements include alkaline earth metals, group III metals, and some transition and rare earth metals. The method is comprised of sequentially pulsing one of above mentioned metal containing organometallic precursors and a hydrogen plasma as a reducing agent into a high vacuum reaction chamber containing a substrate surface with pulsed or continuous flow of an inert purge gas between each pulsing step. The system comprising a very high efficiency H plasma source, the high vacuum reactor chamber, an anti-corrosion turbo pump and a high vacuum load lock is required for reducing contaminant gases such as O.sub.2, H.sub.2O, and CO.sub.2, and for increasing hydrogen plasma efficiency.

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.