Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 is independently selected from Hydrogen; halogen; linear, cyclic or branched hydrocarbons; primary amino ligands (—NHR); or secondary amino ligands (—NRR′), with R and R′ independently being H or a linear, cyclic or branched hydrocarbon, provided at least one of R.sup.1, R.sup.2, or R.sup.3 in Formula I and R.sup.4 or R.sup.5 in Formula II is an amino ligand. ##STR00001##

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R.sub.5Cp).sub.2(L), wherein each R is independently H, an alkyl group, or R′.sub.3Si, with each R′ independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N.sup.R,R′-fmd) or amidinates (N.sup.R,R′R″-amd).

Titanium-containing film forming compositions are disclosed as well as methods of synthesizing the same and methods of forming Titanium-containing films on substrates via vapor deposition processes using the Titanium-containing film forming compositions. The Titanium-containing film forming compositions comprise a precursor having the formula Ti(R.sub.5Cp).sub.2(L), wherein each R is independently H, an alkyl group, or R′.sub.3Si, with each R′ independently being H or an alkyl group; L is selected from the group consisting of formamidinates (N.sup.R,R′-fmd) or amidinates (N.sup.R,R′R″-amd).

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

The inventive concept relates to a cobalt precursor, a method for manufacturing a cobalt-containing layer using the same, and a method for manufacturing a semiconductor device using the same. More particularly, the cobalt precursor of the inventive concept includes at least one compound selected from the group consisting of a compound of Formula 1 and a compound of Formula 2.

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

##STR00001##

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 each independently represent a hydrogen atom, C.sub.1˜C.sub.6 alkyl, halo-C.sub.1˜C.sub.6 alkyl, C.sub.2˜C.sub.5 alkenyl, halo-C.sub.2˜C.sub.5 alkenyl, C.sub.3˜C.sub.10 cycloalkyl, halo-C.sub.3˜C.sub.10 cycloalkyl, C.sub.6˜C.sub.10 aryl, halo-C.sub.6˜C.sub.10 aryl or —Si(R.sub.0).sub.3, and wherein R.sub.0 is C.sub.1˜C.sub.6 alkyl or halo-C.sub.1˜C.sub.6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

##STR00001##

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present invention relates to a growth inhibitor for forming a thin film, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom, and more particularly, to a growth inhibitor for forming a thin film represented by Chemical Formula 1 below, a method for forming a thin film using the same, and a semiconductor substrate prepared therefrom.

AnBmXo  [Chemical Formula 1]

wherein A is carbon or silicon, B is hydrogen or a C1-C3 alkyl, X is a halogen, n is an integer from 1 to 15, o is an integer of 1 or more, and m is from 0 to 2n+1.

According to present invention, it is possible to suppress side reactions to appropriately lower a thin film growth rate and remove process byproducts in the thin film, thereby preventing corrosion or deterioration and greatly improving step coverage and thickness uniformity of a thin film even when the thin film is formed on a substrate having a complicated structure.

The present application relates to a method for permanently repairing defects of absent material of a photolithographic mask, comprising the following steps: (a) providing at least one carbon-containing precursor gas and at least one oxidizing agent at a location to be repaired of the photolithographic mask; (b) initiating a reaction of the at least one carbon-containing precursor gas with the aid of at least one energy source at the location of absent material in order to deposit material at the location of absent material, wherein the deposited material comprises at least one reaction product of the reacted at least one carbon-containing precursor gas; and (c) controlling a gas volumetric flow rate of the at least one oxidizing agent in order to minimize a carbon proportion of the deposited material.