Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RI.sub.x, where R is one or more of a C.sub.1-C.sub.10 alkyl, C.sub.3-C.sub.10 cycloalkyl, C.sub.2-C.sub.10 alkenyl, or C.sub.2-C.sub.10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene).sub.2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz).sub.2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

Process for manufacturing a nuclear component comprising i) a support containing a substrate based on a metal (1), the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium; the process comprising a step a) of vaporizing a mother solution followed by a step b) of depositing the protective layer (2) onto the support via a process of chemical vapor deposition of an organometallic compound by direct liquid injection (DLI-MOCVD).

Nuclear component comprising i) a support containing a substrate based on a metal, the substrate (1) being coated or not coated with an interposed layer (3) positioned between the substrate (1) and at least one protective layer (2) and ii) the protective layer (2) composed of a protective material comprising chromium. The composite nuclear component manufactured by the process of the invention has improved resistance to oxidation, hydriding and/or migration of undesired material.

The invention also relates to the use of the nuclear component for combating oxidation and/or hydriding.

A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

A method of forming a ruthenium film on a surface of a substrate in order to embed ruthenium in a recess formed in the surface of the substrate includes depositing ruthenium by supplying a ruthenium raw material gas to the substrate under a preset first pressure, and depositing the ruthenium by supplying the ruthenium raw material gas to the substrate under a preset second pressure, which is lower than the first pressure. The ruthenium film is formed by alternately repeating the depositing the ruthenium under the first pressure and the depositing the ruthenium under the second pressure.

Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.

An apparatus for forming semiconductor films can include a horizontal flow reactor including an upper portion and a lower portion that are moveably coupled to one another so as to separate from one another in an open position and so as to mate together in a closed position to form a reactor chamber. A central injector column can penetrate through the upper portion of the horizontal flow reactor into the reactor chamber, the central injector column configured to allow metalorganic precursors into the reactor chamber in the closed position. A heated metalorganic precursor line can be coupled to the central injector column and configured to heat a low vapor pressure metalorganic precursor vapor contained in the heated metalorganic precursor line upstream of the central injector column to a temperature range between about 70° C. and 200° C.