Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.

A conformally metal-coated glass capillary array and method of fabricating same. A glass capillary array is provided. The glass capillary array includes a plurality of glass capillaries. The glass capillary array includes a plurality of glass capillary array walls. The plurality of glass capillary array walls define a plurality of holes. The plurality of holes includes a plurality of hole peripheries. An electroless metallization catalyst is provided around the plurality of hole peripheries. A first metal is electroless plated on the plurality of glass capillary array walls using the electroless metallization catalyst. A second metal is electroplated on the electroless-plated, first metal, or the second metal is electroless-plated on the electroless-plated, first metal.

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.

A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.

A semiconductor wafer carrier structure includes a carrier body having a surface; a protective film covering the surface; a susceptor disposed on the carrier body; and a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses, wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor.

The disclosed and claimed subject matter relates to the ruthenium pyrazolate precursors and derivatives thereof as well as their uses in ALD or ALD-like processes and the films grown is such processes. In particular substituted unsaturated pyrazolate bridged diruthenium carbonyl complexes are disclosed.