Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

A coated component, along with methods of its formation and use, is provided. The coated component may include a substrate having a surface, a first refractory layer on the surface of the substrate, a silicon-based bond coating on the first refractory layer, and an environmental barrier coating on the silicon-based bond coating. The silicon-based bond coating includes a silicon-phase contained within a refractory phase such that, when melted, the silicon-phase is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating.

A coated component, along with methods of its formation and use, is provided. The coated component may include a substrate having a surface, a first refractory layer on the surface of the substrate, a silicon-based bond coating on the first refractory layer, and an environmental barrier coating on the silicon-based bond coating. The silicon-based bond coating includes a silicon-phase contained within a refractory phase such that, when melted, the silicon-phase is contained within the refractory phase and between the surface of the substrate and an inner surface of the environmental barrier coating.

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.

Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200° C. The method may also include depositing a silicon-containing film along the patterned photoresist.

A film deposition method includes depositing an amorphous silicon film in a substrate under a process condition. The process condition includes supplying SiH.sub.4 gas into a processing chamber in which the substrate is placed. The process condition includes setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C. The process condition includes setting a pressure of the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr.

A film deposition method includes depositing an amorphous silicon film in a substrate under a process condition. The process condition includes supplying SiH.sub.4 gas into a processing chamber in which the substrate is placed. The process condition includes setting a temperature in the processing chamber to be in a range of greater than or equal to 300° C. and less than or equal to 440° C. The process condition includes setting a pressure of the processing chamber to be in a range of greater than or equal to 10 Torr and less than or equal to 100 Torr.

A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.