A conductor material includes a metal matrix, and a first carbon allotrope distributed within the metal matrix, the first carbon allotrope being aligned with a direction of electric current flow through a length of the metal matrix. The metal matrix and the first carbon allotrope have an electrical interfacial coherency.

A conductor material includes a metal matrix, and a first carbon allotrope distributed within the metal matrix, the first carbon allotrope being aligned with a direction of electric current flow through a length of the metal matrix. The metal matrix and the first carbon allotrope have an electrical interfacial coherency.

A hard coating for a substrate or portion of a razor blade wherein a main layer of the hard coating includes graphene and/or any combination of derivatives thereof. The graphene may be deposited on the substrate or portion of the razor blade using plasma assisted chemical vapor deposition (PECVD) or similar process.

A hard coating for a substrate or portion of a razor blade wherein a main layer of the hard coating includes graphene and/or any combination of derivatives thereof. The graphene may be deposited on the substrate or portion of the razor blade using plasma assisted chemical vapor deposition (PECVD) or similar process.

A DLC preparation apparatus and a preparation method. The DLC preparation apparatus comprises a body (10), a plasma source unit (50), and at least one gas supplying part (20). The body (10) is provided with a reaction chamber (100). The reaction chamber (100) is used for placing a substrate. The gas supplying part (20) is used for supplying a reaction gas to the reaction chamber (100). The plasma source unit (50) is provided outside of the body (10) and provides a radiofrequency electric field to the reaction chamber (100) to promote the generation of plasma, thus allowing the reaction gas to be deposited on the surface of the substrate by means of PECVD to form a DLC film.

A DLC preparation apparatus and a preparation method. The DLC preparation apparatus comprises a body (10), a plasma source unit (50), and at least one gas supplying part (20). The body (10) is provided with a reaction chamber (100). The reaction chamber (100) is used for placing a substrate. The gas supplying part (20) is used for supplying a reaction gas to the reaction chamber (100). The plasma source unit (50) is provided outside of the body (10) and provides a radiofrequency electric field to the reaction chamber (100) to promote the generation of plasma, thus allowing the reaction gas to be deposited on the surface of the substrate by means of PECVD to form a DLC film.

A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

Graphene is deposited on a metal surface of a substrate using a remote hydrogen plasma chemical vapor deposition technique. The graphene may be deposited at temperatures below 400 C, which is suitable for semiconductor processing applications. Hydrogen radicals are generated in a remote plasma source located upstream of a reaction chamber, and hydrocarbon precursors are flowed into the reaction chamber downstream from the remote plasma source. The hydrocarbon precursors are activated by the hydrogen radicals under conditions to deposit graphene on the metal surface of the substrate in the reaction chamber.

The invention provides a multi-layered electrode for sensing pH, the electrode comprising: a sensing layer on a substrate, the sensing layer comprising at least one proton-sensitive metal oxide, wherein a pH-dependent potential of the multi-layered electrode is measurable via an electrically conductive connection to the sensing layer; a proton-permeable layer covering at least a portion of the sensing layer, the proton-permeable layer comprising at least one electrically insulating proton-conductive metal oxide; and a carbonaceous layer on the proton-permeable layer, the carbonaceous layer comprising amorphous carbon.