A component includes a metallic substrate having a tribological surface and a coating. The coating includes a first layer disposed on the tribological surface and a second layer disposed on the first layer. The first layer includes titanium, chromium, or a diamond-like carbon (DLC). The second layer includes a disulfide.

A system and method for enhancing a diffusion limited CVI/CVD process is provided. The system may densify a porous structure by flowing a reactant gas around the porous structure. A mass flow controller may be configured to pulse the flow rate of the reactant gas around the porous structure. The mass flow controller may pulse the flow rate from a nominal flow rate to a first flow rate. The mass flow controller may pulse the first flow rate back to the nominal flow rate or to a second flow rate. The mass flow controller may pulse the flow rate between the nominal flow rate, the first flow rate, and the second flow rate, as desired.

A system and method for enhancing a diffusion limited CVI/CVD process is provided. The system may densify a porous structure by flowing a reactant gas around the porous structure. A mass flow controller may be configured to pulse the flow rate of the reactant gas around the porous structure. The mass flow controller may pulse the flow rate from a nominal flow rate to a first flow rate. The mass flow controller may pulse the first flow rate back to the nominal flow rate or to a second flow rate. The mass flow controller may pulse the flow rate between the nominal flow rate, the first flow rate, and the second flow rate, as desired.

A transparent electrode is provided having a graphene conducting layer disposed above a substrate, a field effect control layer formed by using a transparent material, and a dielectric layer disposed between the graphene conducting layer and the field effect control layer, wherein the field effect control layer has a polarity charge in a working state. A sheet resistance of the transparent electrode is reduced.

A transparent electrode is provided having a graphene conducting layer disposed above a substrate, a field effect control layer formed by using a transparent material, and a dielectric layer disposed between the graphene conducting layer and the field effect control layer, wherein the field effect control layer has a polarity charge in a working state. A sheet resistance of the transparent electrode is reduced.

Disclosed herein are dendritically porous three-dimensional structures, including hierarchical dendritically porous three-dimensional structures. The structures include metal foams and graphite structures, and are useful in energy storage devices as well as chemical catalysis.

Disclosed herein are dendritically porous three-dimensional structures, including hierarchical dendritically porous three-dimensional structures. The structures include metal foams and graphite structures, and are useful in energy storage devices as well as chemical catalysis.

Semiconductor devices comprising: a semiconductor device comprising: a first electrode comprising conductive material, wherein the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite), or wherein the conductive material comprises CVD grown graphene or carbon nanotubes; a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode; an optional insulation layer; a perovskite active layer; a second charge transportation layer; and a second electrode.

Semiconductor devices comprising: a semiconductor device comprising: a first electrode comprising conductive material, wherein the conductive material is deposited by ink deposition (for example, layered material inks such as graphene and/or graphite), or wherein the conductive material comprises CVD grown graphene or carbon nanotubes; a first charge transportation layer, wherein the first charge transportation layer is doped with the conductive material of the first electrode; an optional insulation layer; a perovskite active layer; a second charge transportation layer; and a second electrode.

The method includes forming an inner monolithic layer from crystals of beta phase stoichiometric silicon carbide on a carbon substrate in the form of a rod by chemical methylsilane vapor deposition in a sealed tubular hot-wall CVD reactor. The method further includes forming a central composite layer over the inner monolithic layer by twisting continuous beta phase stoichiometric silicon carbide fibers into tows, transporting the tows to a braiding machine, and forming a reinforcing thread framework. A pyrocarbon interface coating is built up by chemical methane vapor deposition in a sealed tubular hot-wall CVD reactor. Then, a matrix is formed by chemical methylsilane vapor deposition in the reactor. A protective outer monolithic layer is formed from crystals of beta phase stoichiometric silicon carbide over the central composite layer by chemical methylsilane vapor deposition in a CVD reactor. And then the carbon substrate is removed from the fabricated semi-finished product.