A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.

A substrate processing apparatus includes: configured to support a plurality of substrates; a chamber sidewall surrounding at least a side surface of the substrate support; and an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support. The plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support and a separation between at least two process regions of the plurality of process regions. The plurality of process regions include a pretreatment process region between the pretreatment process plate portion and the substrate support and having a first height, and a deposition process region between the deposition process plate portion and the substrate support and having a second height, greater than the first height.

A substrate processing apparatus includes: configured to support a plurality of substrates; a chamber sidewall surrounding at least a side surface of the substrate support; and an upper plate including a plurality of plate portions on the substrate support and spaced apart from the substrate support. The plurality of plate portions and the substrate support collectively at least partially define a plurality of process regions between the plurality of plate portions and the substrate support and a separation between at least two process regions of the plurality of process regions. The plurality of process regions include a pretreatment process region between the pretreatment process plate portion and the substrate support and having a first height, and a deposition process region between the deposition process plate portion and the substrate support and having a second height, greater than the first height.

Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.

A method for manufacturing a pellicle according to the technical idea of the present invention includes preparing a support substrate, forming a catalyst layer including nickel (Ni) in which one selected from a (110) plane and a (100) plane is a dominant crystal plane, on the support substrate, and performing a chemical vapor deposition process on the catalyst layer at about 1050° C. or less to form a membrane having a graphite layer.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.

Inventive techniques for forming unique compositions of matter are disclosed, as well as various advantageous physical characteristics, and associated properties of the resultant materials. In particular, metal(s) (including various alloys, such as Inconel superalloys) are characterized by having carbon disposed within the metal lattice structure thereof. The carbon is primarily, or entirely, present at interstitial sites of the metal lattice, and may be present in amounts ranging from about 15 wt % to about 90 wt %. The carbon, moreover, forms non-polar covalent bonds with both metal atoms of the lattice and other carbon atoms present in the lattice. This facilitates substantially homogeneous dispersal of the carbon throughout the resultant material, conveying unique and advantageous properties such as strength-to-weight ratio, density, mechanical toughness, sheer strength, flex strength, hardness, anti-corrosiveness, electrical and/or thermal conductivity, etc. as described herein. In some approaches, the composition of matter may be powderized, or the powder may be pelletized.

A vessel has a lumen defined at least in part by a wall. The wall has an interior surface facing the lumen, an outer surface, and a plasma-enhanced chemical vapor deposition (PECVD) coating set supported by the wall. The PECVD coating set comprises a water barrier coating or layer having a water contact angle from 80 to 180 degrees, applied using a precursor comprising at least one of a saturated or unsaturated fluorocarbon precursor having from 1 to 6 carbon atoms and a saturated or unsaturated hydrocarbon having from 1 to 6 carbon atoms. Optionally, the coating set includes an SiOx gas barrier coating or layer from 2 to 1000 nm thick, in which x is from 1.5 to 2.9 as measured by x-ray photoelectron spectroscopy (XPS), and optionally other related coatings.