A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.

A method for coating fibers, includes desizing sized short fibers having an average length less than or equal to 5 mm, the short fibers being made of ceramic material or carbon, sieving the desized short fibers in order to separate them from any agglomerates of sized short fibers still present, introducing the desized and sieved short fibers into a reactor, and coating the short fibers in the reactor by chemical vapor deposition in a fluidized bed.

To appropriately transmit far-infrared rays while ensuring design. A far-infrared ray transmission member (20) includes a base material (30) configured to transmit far-infrared rays, and a functional film (31) formed on the base material (30). Dispersion of reflectances with respect to pieces of light at a wavelength of 360 nm to 830 nm in increments of 1 nm is equal to or smaller than 30, a reflectance with respect to visible light defined by JIS R3106 is equal to or lower than 25%, and an average transmittance with respect to light at a wavelength of 8 μm to 12 μm is equal to or higher than 50%.

To appropriately transmit far-infrared rays while ensuring design. A far-infrared ray transmission member (20) includes a base material (30) configured to transmit far-infrared rays, and a functional film (31) formed on the base material (30). Dispersion of reflectances with respect to pieces of light at a wavelength of 360 nm to 830 nm in increments of 1 nm is equal to or smaller than 30, a reflectance with respect to visible light defined by JIS R3106 is equal to or lower than 25%, and an average transmittance with respect to light at a wavelength of 8 μm to 12 μm is equal to or higher than 50%.

The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociate to form carbon dimers and trimmers. Upon cooling semi-cyrstalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-cyrstalline carbon film to CO.sub.2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

The embodiments herein provide a system and a method for the synthesis of Graphene Quantum Dots (GQDs) for use in applications like nano-electronics, photonics, bio-imaging, energy storage, quantum computing, etc. Cu substrate is placed inside the CVD tube, and the CVD Chamber is sealed. The process parameters for CVD process are set up. Precursor gases injected inside the tube are dissociate to form carbon dimers and trimmers. Upon cooling semi-cyrstalline carbon film deposits inside the CVD tube. Oxidizing gas mixture is injected to convert amorphous C in semi-cyrstalline carbon film to CO.sub.2/CO. Graphene Quantum Dots (GQDs) so formed are carried with the gas flow and deposited at the cooler end of tube. The scrapper assembly is inserted in the CVD Tube and the reagent is sprayed inside the tube to disperse these GQDs in the reagent. This dispersion is pumped out of the CVD Chamber.

The present invention provides a graphene structure having graphene bubbles and a preparation method for the same. The preparation method comprises: providing a substrate; forming a hydrogen terminated layer on a top surface of the substrate and a graphene layer disposed on a top surface of the hydrogen terminated layer; and placing a probe on the graphene layer and applying a preset voltage to the probe, to excite a part of the hydrogen terminated layer at a position corresponding to the probe to convert into hydrogen, the hydrogen causing the graphene layer at a position corresponding to the hydrogen to bulge, so as to form a graphene bubble enveloping the hydrogen.

The present invention provides a graphene structure having graphene bubbles and a preparation method for the same. The preparation method comprises: providing a substrate; forming a hydrogen terminated layer on a top surface of the substrate and a graphene layer disposed on a top surface of the hydrogen terminated layer; and placing a probe on the graphene layer and applying a preset voltage to the probe, to excite a part of the hydrogen terminated layer at a position corresponding to the probe to convert into hydrogen, the hydrogen causing the graphene layer at a position corresponding to the hydrogen to bulge, so as to form a graphene bubble enveloping the hydrogen.

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

The invention relates to the use of a carbonaceous coating for protection of a passive electrical component from attack by ammonia, wherein the carbonaceous coating is a sol-gel coating or a plasma-polymeric coating. This coating comprises a particular carbon content.