In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.

A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The method may include, providing a substrate within a reaction chamber, exposing the substrate to a pre-deposition precursor pulse, which comprises tin tetrachloride (SnCl.sub.4), exposing the substrate to a deposition precursor gas mixture comprising a hydrogenated silicon source, germane (GeH.sub.4), and tin tetrachloride (SnCl.sub.4), and depositing the silicon germanium tin (SiGeSn) layer over a surface of the substrate. Semiconductor device structures including a silicon germanium tin (SiGeSn) layer formed by the methods of the disclosure are also provided.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

In various embodiments, evaporation sources are heated and/or cooled via a fluid-based thermal management system during deposition of thin films.

In some aspects of the present disclosure, a method includes performing an atomic layer deposition (ALD) process to form an antimony-containing coating of a surface of a substrate. The ALD process includes providing a first reactant to the surface of the substrate. The first reactant adsorbs onto the surface to form an adsorption layer thereon. The ALD process further includes providing a second reactant to the surface of the substrate. The second reactant includes a reducing agent. The second reactant reacts with the adsorption layer to form a layer of the antimony-containing coating. The ALD process further includes repeating the providing of the first reactant and the providing of the second reactant one or more times to form the antimony-containing coating.

In some aspects of the present disclosure, a method includes performing an atomic layer deposition (ALD) process to form an antimony-containing coating of a surface of a substrate. The ALD process includes providing a first reactant to the surface of the substrate. The first reactant adsorbs onto the surface to form an adsorption layer thereon. The ALD process further includes providing a second reactant to the surface of the substrate. The second reactant includes a reducing agent. The second reactant reacts with the adsorption layer to form a layer of the antimony-containing coating. The ALD process further includes repeating the providing of the first reactant and the providing of the second reactant one or more times to form the antimony-containing coating.

In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

In a method for removing a boron film formed on a substrate by CVD, heat treatment is performed on a part or all boron film in an oxidizing atmosphere and oxidizing a heat-treated portion. Then, an oxidized portion of the boron film is removed by water or aqueous solution containing electrolyte ions.

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

An article comprises a body having a coating. The coating comprises a YOF coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.