A method of depositing one or more epitaxial material layers, a device structure formed using the method and a system for performing the method are disclosed. Exemplary methods include coating a surface of a reaction chamber with a precoat material, processing a number of substrates, and then cleaning the reaction chamber.

Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae:

##STR00001##

wherein each R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae:

##STR00001##

wherein each R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9 and R.sup.10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.

In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.

Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.

Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used trichlorogermane.

Method for producing an optical layer system that includes a multiplicity of layers arranged on a substrate, where part of the layers has a high refractive index n.sub.H, another part has a low refractive index n.sub.L and a further part has a middle refractive index n.sub.M, where n.sub.H>n.sub.Mn.sub.L and the layers having different refractive indices have an alternating stacked arrangement. The layers of the optical layer system are deposited onto a substrate by a selected coating method from an identical material which is hydrogenated amorphous silicon (a-Si:H) or hydrogenated germanium (Ge:H), where a refractive index and an extinction coefficient of each layer of the multiplicity of layers of the layer system are adjusted by a regulation of process parameters of the selected coating method.

Method for producing an optical layer system that includes a multiplicity of layers arranged on a substrate, where part of the layers has a high refractive index n.sub.H, another part has a low refractive index n.sub.L and a further part has a middle refractive index n.sub.M, where n.sub.H>n.sub.Mn.sub.L and the layers having different refractive indices have an alternating stacked arrangement. The layers of the optical layer system are deposited onto a substrate by a selected coating method from an identical material which is hydrogenated amorphous silicon (a-Si:H) or hydrogenated germanium (Ge:H), where a refractive index and an extinction coefficient of each layer of the multiplicity of layers of the layer system are adjusted by a regulation of process parameters of the selected coating method.

A method, system and apparatus for selective deposition on a substrate, comprising providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, wherein the first surface is materially different from the second surface, wherein the first surface is a metal oxide, metal nitride, metal oxynitride, or a metal carbide or a combination thereof, wherein the second surface is a dielectric or a metal and contacting the substrate with a precursor comprising a hydrophobic compound to selectively deposit a passivation layer on the first surface relative to the second surface.