A magnetic recording medium includes a nonmagnetic substrate, a soft magnetic underlayer, an orientation control layer, a perpendicular magnetic layer, and a protection layer that are arranged in this order. The perpendicular magnetic layer includes a first magnetic layer and a second magnetic layer that are arranged in this order on the orientation control layer. The first magnetic layer has a granular structure including an oxide at grain boundary parts of magnetic grains, and the second magnetic layer is closest to the protection layer among layers within the perpendicular magnetic layer, and includes magnetic grains made of a CoCrPt alloy, and a nitride of carbon or a hydride of carbon.

A magnetic recording medium includes a nonmagnetic substrate, a soft magnetic underlayer, an orientation control layer, a perpendicular magnetic layer, and a protection layer that are arranged in this order. The perpendicular magnetic layer includes a first magnetic layer and a second magnetic layer that are arranged in this order on the orientation control layer. The first magnetic layer has a granular structure including an oxide at grain boundary parts of magnetic grains, and the second magnetic layer is closest to the protection layer among layers within the perpendicular magnetic layer, and includes magnetic grains made of a CoCrPt alloy, and a nitride of carbon or a hydride of carbon.

There is provided a film forming method including: adsorbing fluorine onto a substrate on which a region in which a nitride film is exposed and a region in which an oxide film is exposed are provided adjacent to each other by supplying a fluorine-containing gas to the substrate, and forming a stepped surface on a side surface of the oxide film by selectively etching the nitride film, among the nitride film and the oxide film, so as to cause a surface of the nitride film to be more deeply recessed than a surface of the oxide film; and after the adsorbing the fluorine onto the substrate and forming the stepped surface, selectively forming a semiconductor film on the nitride film, among the nitride film and the oxide film, by supplying a raw material gas including a semiconductor material to the substrate.

A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350 to less than about 500 C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500 C. to less than about 1000 C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.

Methods for forming a Ge-containing film on a substrate comprise the steps of introducing a vapor of a cyclic Ge(II) silylamido precursor into a reactor having the substrate disposed therein and depositing at least part of the cyclic Ge(II) silylamido precursor onto the substrate to form the Ge-containing film using a vapor deposition method. The cyclic Ge(II) silylamido precursor is [SiMe.sub.3-(N)SiMe.sub.2-(N)SiMe.sub.3]Ge(II) or [tBu-(N)SiMe.sub.2-(N)-tBu]Ge(II).

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

A low pressure process for producing thin film crystalline black phosphorus on a substrate and a black phosphorus thin film made by the process. The process includes flowing a phosphorus-containing gas into a deposition chamber and depositing phosphorus from the phosphorus-containing gas onto the substrate in the chamber. The substrate is selected from (i) a gold substrate, a gold-tin alloy substrate, a silver substrate and a copper substrate and (ii) a substrate comprising a thin film of metal selected from gold, tin, silver, copper and alloys of the foregoing metals. The substrate and phosphorus are heated to a temperature ranging from about 350 to less than about 500 C. to form a phosphorus intermediate composition. The substrate and intermediate composition are heated to a temperature of greater than 500 C. to less than about 1000 C. convert the metal phosphorus intermediate composition to the black phosphorus thin film.