Wave-absorbing material powder of the present invention has oxidation resistance and salt fog resistance, which includes an iron-containing wave-absorbing material powder, and a metal oxide ceramic layer and a metal phosphate layer sequentially coated on an outside of the iron-containing wave-absorbing material powder from the inside to the outside. A method for preparing the wave-absorbing material powder includes using atomic layer deposition to coat the iron-containing wave absorbing material powder with a metal oxide ceramic coating, and then adopting the atomic layer deposition to coat the metal oxide ceramic coating with a metal phosphate layer; repeating the above steps to form an alternating nano-stack of the metal oxide ceramic coating and the metal phosphate layer outside the iron-containing absorbing material powder; and finally performing a high-temperature annealing treatment. The present invention improves temperature resistance, corrosion resistance and oxidation resistance of wave-absorbing materials.

Wave-absorbing material powder of the present invention has oxidation resistance and salt fog resistance, which includes an iron-containing wave-absorbing material powder, and a metal oxide ceramic layer and a metal phosphate layer sequentially coated on an outside of the iron-containing wave-absorbing material powder from the inside to the outside. A method for preparing the wave-absorbing material powder includes using atomic layer deposition to coat the iron-containing wave absorbing material powder with a metal oxide ceramic coating, and then adopting the atomic layer deposition to coat the metal oxide ceramic coating with a metal phosphate layer; repeating the above steps to form an alternating nano-stack of the metal oxide ceramic coating and the metal phosphate layer outside the iron-containing absorbing material powder; and finally performing a high-temperature annealing treatment. The present invention improves temperature resistance, corrosion resistance and oxidation resistance of wave-absorbing materials.

A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

The present disclosure provides a powder-atomic-layer-deposition device with knocker, which mainly includes a vacuum chamber, a shaft seal, a drive unit and a knocker. The drive unit is connected to the rear wall of the vacuum chamber via the shaft seal, for driving the vacuum chamber to rotate. The shaft seal includes an outer tube and an inner tube, wherein the inner tube is disposed within the containing space of the outer tube. The inner tube is disposed with a gas-extracting pipeline and a gas-inlet pipeline therein, wherein the gas-extracting pipeline is for gas extraction of the vacuum chamber, the gas-inlet pipeline is for transferring a precursor gas into the vacuum chamber. The knocker and the vacuum chamber are adjacent to each other, for knocking the vacuum chamber to prevent powders within the reacting space from sticking to the inner surface of the vacuum chamber.

Thio(di)silanes comprising a thiosilane of formula (A): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(Si)X.sub.xH.sub.h (A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (R.sup.1aR.sup.1bR.sup.1cCS).sub.s(R.sup.2.sub.2N)(Si—Si)X.sub.xH.sub.h (I) wherein subscript s is from 1 to 6, and wherein R.sup.1a, R.sup.1b, R.sup.1c, R.sup.2, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Described herein is a technique capable of suppressing an adhesion of deposits to an inside of a reaction vessel of a substrate processing apparatus. According to one aspect, there is provided a substrate processing apparatus including: a substrate retainer provided with a substrate support region; a heat insulator provided below the substrate support region; and a reaction vessel of a cylindrical shape in which the substrate retainer and the heat insulator are accommodated, wherein the reaction vessel includes: an auxiliary chamber protruding outward in a radial direction of the reaction vessel and extending along an extending direction from at least a position below an upper end of the heat insulator to a position facing the substrate support region; and a first cover provided in the auxiliary chamber along a plane perpendicular to the extending direction of the auxiliary chamber so as to divide an inner space of the auxiliary chamber.

Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.

Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface of the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.

Methods for depositing protective coatings on aerospace components are provided and include sequentially exposing the aerospace component to a chromium precursor and a reactant to form a chromium-containing layer on a surface of the aerospace component by an atomic layer deposition process. The chromium-containing layer contains metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium silicide, or any combination thereof.