An atomic layer deposition-inhibiting material composed of a fluorine-containing resin that has a fluorine content of 30 at % or greater, has at least one tertiary carbon atom and quaternary carbon atom, and lacks ester groups, hydroxyl groups, carboxyl groups, and imide groups.

Triboelectric nanogenerators that operate in a vertical contact separation mode and methods for fabricating the triboelectric generators are provided. Also provided are methods for using the triboelectric nanogenerators to harvest mechanical energy and convert it into electric energy. In the TENGs, one or both of the triboelectrically active layers comprises a cellulose that has been chemically treated to alter its electron affinity.

Triboelectric nanogenerators that operate in a vertical contact separation mode and methods for fabricating the triboelectric generators are provided. Also provided are methods for using the triboelectric nanogenerators to harvest mechanical energy and convert it into electric energy. In the TENGs, one or both of the triboelectrically active layers comprises a cellulose that has been chemically treated to alter its electron affinity.

Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a co-reactant to form a metal containing film are described. The metal precursor comprises a metal atom and an allyl ligand, the metal atom comprises one or more lanthanide.

Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a co-reactant to form a metal containing film are described. The metal precursor comprises a metal atom and an allyl ligand, the metal atom comprises one or more lanthanide.

Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

A chamber of a hybrid chemical and physical vapor deposition (HybCPVD) provides high-quality and uniform films on relatively large multiple wafers per growth run at reasonably high deposition rates using a scalable high-throughput process. Transition-metal-alloyed III-N single-crystalline and textured thin films are epitaxially and non-epitaxially deposited on a suitable substrate (of, for example, silicon or a metal such as aluminum or titanium) by providing a mixture of various gases in a deposition/growth chamber. The precursors for the chemical reactions include vapor phase of elements of transition metals, vapor phase of chlorides, and vapor phase of hydride. This growth technique provides high growth rate and high-quality epitaxial materials.

A method of growing carbon nanotubes includes following steps. A reactor is constructed, wherein the reactor includes a reactor chamber and a rotating mechanism inside the reactor chamber. A carbon nanotube catalyst composite layer is applied, the carbon nanotube catalyst composite layer is configured to be rotated by the rotating mechanism in the reactor chamber, and the carbon nanotube catalyst composite layer includes a carbon nanotube layer and a number of catalyst particles dispersed in the carbon nanotube layer. The carbon nanotube catalyst composited layer is positioned inside the reactor chamber. A mixture of carbon source gas and carrier gas is introduced into the reactor chamber. The carbon nanotube catalyst composite layer is rotated. The carbon nanotube catalyst composite layer is heated to grow carbon nanotubes.

Systems for depositing coatings onto surfaces of molds and other articles are generally provided. In some embodiments, a system is adapted and arranged to cause gaseous species to flow parallel to a filament array. In some embodiments, a system comprises one or more mold supports that are translatable.

Systems for depositing coatings onto surfaces of molds and other articles are generally provided. In some embodiments, a system is adapted and arranged to cause gaseous species to flow parallel to a filament array. In some embodiments, a system comprises one or more mold supports that are translatable.