Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR.sup.1R.sup.2R.sup.3).sub.3 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.

A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H.sub.2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (C.sub.xH.sub.y-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.

A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing H.sub.2O and Cl from the thin film by heating the thin film at a first temperature higher than a temperature of the substrate in the forming of the thin film, and removing second impurities containing a hydrocarbon compound (C.sub.xH.sub.y-based impurities) from the thin film in which heat treatment is performed at the first temperature by heating the thin film at a second temperature equal to or higher than the first temperature.

A method is disclosed for forming multi-layered structures on polymeric or other materials that provide optical functions or protect underlying layers from exposure to oxygen and water vapor. Novel devices are also disclosed that may include both multi-layered protective structures and AMOLED display, OLED lighting or photovoltaic devices. The protective multi-layer structure itself may be made by depositing successively on a substrate at least three very thin layers of material with different density or composition. In some methods for deposition of such film, the layers are deposited by varying the energy of ion bombardment per unit thickness of the film. Any layer of the structure may include one or more of the materials: silicon nitride, silicon oxide, silicon oxynitride, or metallic nitride or oxide. Specific commercial applications that benefit from this include manufacturing of photovoltaic devices or organic light emitting diode devices (OLED) including lighting and displays.

A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.

A film containing a prescribed element and carbon is formed on a substrate, by performing a cycle a prescribed number of times, the cycle including: supplying an organic-based source containing a prescribed element and a pseudo catalyst including at least one selected from the group including a halogen compound and a boron compound, into a process chamber in which the substrate is housed, and confining the organic-based source and the pseudo catalyst in the process chamber; maintaining a state in which the organic-based source and the pseudo catalyst are confined in the process chamber; and exhausting an inside of the process chamber.

A substrate includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer encapsulating the polycrystalline ceramic core, a barrier layer encapsulating the first adhesion layer, a second adhesion layer coupled to the barrier layer, and a conductive layer coupled to the second adhesion layer. The substrate also includes a bonding layer coupled to the support structure, a substantially single crystal silicon layer coupled to the bonding layer, and an epitaxial semiconductor layer coupled to the substantially single crystal silicon layer.

A composite substrate is resistant to the development of cracks, thereby not having deteriorating properties even when exposed to high-temperatures or low temperatures, and a method is provided for producing the composite substrate. The composite substrate 10 of the present invention has a supporting substrate 2, a stress relaxing interlayer 3, and an oxide single-crystal thin film 1 stacked in the listed order. The stress relaxing interlayer 3 has a thermal expansion coefficient between that of the supporting substrate 2 and that of the oxide single-crystal thin film 1.

A composite substrate is resistant to the development of cracks, thereby not having deteriorating properties even when exposed to high-temperatures or low temperatures, and a method is provided for producing the composite substrate. The composite substrate 10 of the present invention has a supporting substrate 2, a stress relaxing interlayer 3, and an oxide single-crystal thin film 1 stacked in the listed order. The stress relaxing interlayer 3 has a thermal expansion coefficient between that of the supporting substrate 2 and that of the oxide single-crystal thin film 1.

A micromechanical functional assembly including at least one first part with a first functional surface intended to enter into frictional contact with a second functional surface, the second functional surface belonging either to the first part or to at least one second part constituting with the first part the functional assembly, wherein the functional assembly includes the first functional surface and the second functional surface are formed by a first layer including ultrananocrystalline, nanocrystalline or microcrystalline diamond, the first layer being topped by a second layer including S and F atoms. It also relates to the method for functionalising diamond.