Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A coated tool of the present disclosure is provided with a base member and a coating layer located on a surface of the base member. The coating layer includes a TiCNO layer and an Al.sub.2O.sub.3 layer. The Al.sub.2O.sub.3 layer is located in contact with the TiCNO layer at a position farther from the base member than the TiCNO layer is. The TiCNO layer includes a composite protrusion including a first protrusion that projects toward the Al.sub.2O.sub.3 layer, a second protrusion that projects from the first protrusion in a direction intersecting a direction in which the first protrusion projects, and a third protrusion that projects from the second protrusion in a direction intersecting the direction in which the second protrusion projects.

Articles are described including a substrate and a copper halide layer on the substrate, where the interfacial free energy between the substrate and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer conforms to the shape of the substrate. The articles may further include an adhesion layer disposed in-between the substrate and the copper halide layer, where the surface free energy between the adhesion layer and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer or the adhesion layer conform to the shape of the substrate. Also described are methods of forming an article using chemical vapor deposition.

Articles are described including a substrate and a copper halide layer on the substrate, where the interfacial free energy between the substrate and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer conforms to the shape of the substrate. The articles may further include an adhesion layer disposed in-between the substrate and the copper halide layer, where the surface free energy between the adhesion layer and the copper halide layer allows the copper halide layer to form continuously, wherein the copper halide layer or the adhesion layer conform to the shape of the substrate. Also described are methods of forming an article using chemical vapor deposition.

A cutting tool includes: a substrate; a hard layer provided on the substrate; and a titanium carbonitride layer provided on the hard layer, wherein a thickness of the titanium carbonitride layer is more than or equal to 2 μm, a hardness of the titanium carbonitride layer at a room temperature is more than or equal to 35 GPa, and a Young's modulus of the titanium carbonitride layer at the room temperature is less than or equal to 650 GPa.

The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.

Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: ##STR00001##
A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R.sup.1).sub.d(R.sup.2).sub.e(R.sup.3).sub.g. In the above WGP and method, X can be a bond to the ribs; each R.sup.1 can be a hydrophobic group; each R.sup.3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R.sup.2 can be a silane-reactive-group; and each R.sup.6 can be an alkyl group, an aryl group, or combinations thereof.

Described are precursor compounds and methods for atomic layer deposition of films containing scandium(III) oxide or scandium(III) sulfide. Such films may be utilized as dielectric layers in semiconductor manufacturing processes, particular for depositing dielectric films and the use of such films in various electronic devices.