The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

Methods and precursors for depositing metal fluoride films on a substrate surface are described. The method includes exposing the substrate surface to a metal precursor and a fluoride precursor. The fluoride precursor is volatile at a temperature in a range of from 20° C. to 200° C. The metal precursor reacts with the fluoride precursor to form a non-volatile metal fluoride film.

The metal material of the present disclosure includes: a metal base; and a film provided on a surface of the metal base and containing a fluorine-containing molybdenum compound, the fluorine-containing molybdenum compound being represented by the formula MoO.sub.xF.sub.y wherein x is a number from 0 to 2 and y is a number from 2 to 5.

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, a carbon-doped silicon nitride, or a carbon-doped silicon oxynitride film.