A substrate support for a substrate processing system includes a baseplate, a ceramic layer arranged on the baseplate, and a carrier ring arranged on the ceramic layer. The ceramic layer has a first outer diameter, the carrier ring has a second outer diameter that is less than the first outer diameter, the ceramic layer includes a shoulder that extends from the second outer diameter of the carrier ring to the first outer diameter, and the shoulder slopes downward toward the first outer diameter.

A substrate processing module includes a transfer chamber, an array of processing stations, at least one shutter disk assembly, and a substrate handling device. The array of processing stations is disposed within a transfer volume, and each of the processing stations within the array are configured to selectively process at least one substrate. The shutter disk assembly includes an actuator and a disk blade configured to support a shutter disk coupled thereto. The shutter disk is rotatable between a first position and a second position. In the first position, the disk blade is disposed between two of the plurality of processing stations. In the second position, the disk blade is located under one of the processing stations within the array. The substrate handling device is disposed centrally within the transfer volume and includes a plurality of arms each configured to support and position a substrate.

A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.

Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.

A wafer coating device and a face-down type wafer carrying assembly thereof are provided. The face-down type wafer carrying assembly includes a magnetic force generating module, a temperature control module, and a magnetizable module. The temperature control module is adjacent to the magnetic force generating module. The magnetizable module is disposed on the temperature control module. The magnetizable module includes a high-temperature magnetizable metal plate disposed on the temperature control module. When at least one wafer is temporarily adhered to the adhesive bottom surface of the high-temperature adhesive layer, a prepared surface of the at least one wafer can face downwardly by adhering of the adhesive bottom surface of the high-temperature adhesive layer, so that the face-down type wafer carrying assembly can be applied to solve the problem that the prepared surface of the wafer would be dirtied by falling particles due to gravity.

A method for cleaning a vacuum chamber, particularly a vacuum chamber used in the manufacture of OLED devices is described. The method includes cleaning at least one of an inside of the vacuum chamber and a component inside the vacuum chamber with active species, a process gas for generating the active species includes at least 90% oxygen and 5 at least 2% argon, particularly, wherein the process gas includes about 95% oxygen and about 5% argon.

The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

The present disclosure provides a semiconductor deposition monitoring device comprising a supporting table, a chamber, a lamp, an optical sensor, a conduit, a plurality of sensors in the conduit, and a heat exchanger. The supporting table supports a deposition target wafer on which a deposition material is deposited. The chamber comprises an upper dome and a lower dome. The lamp emits light to the chamber. The optical sensor receives the irradiated light and measures the deposition material formed in the chamber. The conduit has an inlet conduit through which air is injected into the chamber and an outlet conduit through which the air is discharged from the chamber. The plurality of sensors sense information of the air. The sensed information may be used to control the heat exchanger.

The present invention provides an improved plasma source configuration comprising a vacuum chamber having the source. A dielectric member is in communication with the vacuum chamber and surrounded by the plasma source. A high aspect ratio gap is formed between a film breaker and the dielectric member.

A heating part of covering and heating a gas pipe includes: a thermal insulation portion disposed outside a heat generation body; an enclosure configured to enclose the thermal insulation portion and the heat generation body; a fastening part installed outside the enclose and configured to fasten one end portion and the other end portion of the enclosure in a state in which the one end portion and the other end portion of the enclosure adjoin each other; and a temperature sensing part disposed at the side of the gas pipe with respect to the enclosure at a position facing a surface of the gas pipe and formed in a plate shape with a major surface thereof oriented toward the gas pipe.