A conduit system for transporting gas from a gas containing chamber for processing a substrate from which semiconductor devices are formed includes a liner with a spiral vent. The conduit system utilizes a curtain of gas to prevent or reduce deposition of material onto an inner surface of the conduit transporting the gas from the gas containing chamber.

A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component.

A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.

In one embodiment, the disclosed apparatus is a process cooling-water isolation system used in a process tool. The system includes an isolation valve coupled between a water supply and an inlet of one or more components in a process-module water-cooling circuit. An open device allows cooling water to flow to the one or more components, while a close device prevents cooling water from flowing to the one or more components. At least one water-leak sensor is coupled to the close device to detect a water leak within the process tool. A check valve having an inlet port is coupled to an outlet of the one or more components, and an outlet port is coupled to a water-return reservoir. The check valve prevents water from back-flowing from the water-return reservoir into the one or more components. Other apparatuses and methods are disclosed.

According to an aspect of the present disclosure, there is provided a liner of an epitaxial reactor, including a lower body including an entrance stepped portion which is disposed on an upper end of one side of an outer side surface of the lower body and through which a source gas is introduced, a plurality of lower partitions disposed apart from each other on the entrance stepped portion, an upper body disposed on the lower body to face the lower body and including an entrance cover part forming a flow path which is interposed between the entrance stepped portion and the entrance cover part and through which the source gas is introduced, and a plurality of upper partitions disposed apart from each other on the entrance cover part, wherein the upper partitions are more densely disposed in both side portions than in a central portion of the entrance cover part.

A method for operating a substrate processing system includes delivering precursor gas to a chamber using a showerhead that includes a head portion and a stem portion. The head portion includes an upper surface, a sidewall, a lower planar surface, and a cylindrical cavity and extends radially outwardly from one end of the stem portion towards sidewalls of the chamber. The showerhead is connected, using a collar, to an upper surface of the chamber. The collar is arranged around the stem portion. Process gas is flowed into the cylindrical cavity via the stem portion and through a plurality of holes in the lower planar surface to distribute the process gas into the chamber. A purge gas is supplied through slots of the collar into a cavity defined between the head portion and an upper surface of the chamber.

Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

Provided is a method of determination of pretreatment conditions of a heat treatment furnace, wherein the pretreatment is heating a furnace interior of the heat treatment furnace while supplying a gas thereinto, the method including setting a plurality of candidates of a combination of a type of a supply gas and a heating temperature; assigning to each candidate of the combination a score determined according to a type of a target metal identified as an object to be removed in the pretreatment; and determining, from the plurality of candidates, the combination of the type of the supply gas and the heating temperature to be adopted as the pretreatment conditions, with the assigned score serving as an indicator.

A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.