Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and a second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

Provided is an epitaxial growth apparatus which makes it possible to prevent the production of debris between a preheat ring and a lower liner without fracturing the preheat ring. The epitaxial growth apparatus includes: a chamber; an upper liner and a lower liner that are disposed on an inner wall of the chamber; a susceptor being provided inside the chamber; and a preheat ring that is disposed on a supporting portion protruding in an opening of the lower liner and is disposed on the outer circumference of the susceptor. The preheat ring is not supported by the supporting portion in at least a part of a region that is right above a region where the semiconductor wafer passes in a transfer path in which the semiconductor wafer is loaded into the chamber to be set on the susceptor.

A gas distribution unit in connection with an atomic layer deposition reactor includes an inlet surface, an outlet surface, a process gas channel extending through the gas distribution unit and being open to the inlet surface and to the outlet surface, a barrier gas inlet fitting connected to the process gas channel between the inlet surface and the outlet surface for supplying barrier gas to the process gas channel, and a barrier gas outlet fitting connected to the process gas channel between the inlet surface and the barrier gas inlet fitting for discharging barrier gas from the process gas channel.

There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to the substrate and adsorbing the adsorption inhibitor on adsorption sites of an upper portion in the concave portion; (b) forming a first layer by supplying the precursor to the substrate and adsorbing the precursor on adsorption sites existing in the concave portion in which the adsorption inhibition layer is formed; and (c) modifying the adsorption inhibition layer and the first layer into a second layer by supplying a first reactant, which chemically reacts with both the adsorption inhibition layer and the first layer, to the substrate.

A substrate processing apparatus includes a chamber, a supply pipe, a discharge pipe, a trap section, a heater, a buffer section, and a cooling pipe. The chamber houses a substrate. The supply pipe supplies a processing gas into the chamber. The discharge pipe discharges a gas produced in the chamber. The trap section is disposed in the discharge pipe. The heater heats the trap section. The buffer section is disposed downstream of the trap section in the discharge pipe. The cooling pipe cools the buffer section.

Examples of a substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower head provided above the susceptor, and a flow control ring having a shape to surround the susceptor, the flow control ring having a first top surface and a second top surface that has an annular shape and is provided closer to an inner edge of the flow control ring than the first top surface at a higher level than the first top surface, the second top surface being a sloped surface whose height decreases toward the first top surface.

There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively.

A film formation method for forming a CVD film and an ALD film on a film formation target. In an ALD process, an ALD cycle is repeatedly executed a plurality of times, the ALD cycle including: a first step for filling a reaction container with a source gas introduced through a first supply pipe; a second step for exhausting the source gas from the reaction container; a third step for filling the reaction container with a reactant gas activated by an inductively coupled plasma in a second supply pipe and introduced through the second supply pipe; and a fourth step for exhausting the reactant gas from the reaction container. In a CVD process, the ALD cycle is executed at least once, and the second step is finished while leaving the source gas in a gas phase in the reaction container.

The present disclosure is a substrate-processing chamber with a shielding mechanism with the same, which includes a reaction chamber, a substrate carrier, a storage chamber and a shielding mechanism. The reaction chamber is connected to the storage chamber, the substrate carrier is within the reaction chamber. The shielding mechanism includes at least one driving shaft, at least one connecting seat and a shield, wherein the driving shaft extends from the storage chamber to the reaction chamber. The connecting seat is connected to the shield and the driving shaft, wherein the driving shaft drives the shield to move between the storage chamber and the reaction chamber, via the connecting seat.

A method of manufacturing a ceramic matrix composite component may include introducing a gaseous precursor into an inlet portion of a chamber that houses a porous preform and introducing a gaseous mitigation agent into an outlet portion of the chamber that is downstream of the inlet portion of the chamber. The gaseous precursor may include methyltrichlorosilane (MTS) and the gaseous mitigation agent may include hydrogen gas. The introduction of the gaseous precursor may result in densification of the porous preform(s) and the introduction of the gaseous mitigation agent may shift the reaction equilibrium to disfavor the formation of harmful and/or pyrophoric byproduct deposits, which can accumulate in an exhaust conduit 340 of the system.