A vapor phase growth method using a vapor phase growth apparatus including a reaction chamber, a shower plate disposed in the upper portion of the reaction chamber so as to supply a gas into the reaction chamber, and a support portion provided below the shower plate inside the reaction chamber so as to place a substrate thereon, the method includes: placing the substrate on the support portion; heating the substrate; preparing a plurality of kinds of process gases for a film formation process; preparing a mixed gas by controlling mixing ratio between a first purging gas and a second purging gas, wherein the first purging gas and the second purging gas are selected from hydrogen and inert gases, a molecular weight of the first purging gas is smaller than an average molecular weight of the plurality of kinds of process gases and a molecular weight of the second purging gas is larger than the average molecular weight of the plurality of kinds of process gases, so that the average molecular weight of the mixed gas becomes closer to the average molecular weight of the plurality of kinds of process gases than molecular weight of the first purging gas or molecular weight of the second purging gas; ejecting the plurality of kinds of process gases from an inner area of the shower plate, and the mixed gas from an outer area of the shower plate; and forming a semiconductor film on the surface of the substrate.

A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.

A transfer chamber includes a monolithic chamber body, a transfer robot configured to pass substrates between a factory interface and a processing module in a substrate processing system, a load lock chamber station, a shutter station, a pre-clean chamber station, and a process chamber station integrated within the monolithic chamber body, and a plurality of slit valves integrated within the monolithic chamber body. The plurality of slit valves are configured to open and close the load lock chamber station, the pre-clean chamber station, and the process chamber station each from the shutter station such that the load lock chamber station, the pre-clean chamber station, and the process chamber station maintain respective vacuum pressures.

A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

Provided is a reaction chamber for a chemical vapor apparatus. The reaction chamber for a chemical vapor apparatus according to the exemplary embodiment of the present invention includes: a housing having an internal space; a susceptor disposed in the internal space and provided so that a substrate is loaded on an upper surface thereof; a showerhead disposed in the internal space to be placed above the susceptor and provided to spray a process gas toward the substrate side; an inner barrel formed in a hollow shape having an open top, an open bottom, and a predetermined height, and being disposed in the internal space so that an upper edge thereof is positioned at a periphery of the showerhead to enclose the substrate and the susceptor; and a driving part connected to the inner barrel via a power transmission part as a medium, wherein, in case of replacing the susceptor and the substrate, a state of the inner barrel is changed into an open state in which the substrate and the susceptor disposed in the inner barrel are exposed to the outside of the inner barrel by an operation of the driving part.

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.

A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

An atomic layer deposition apparatus includes a film-forming container 11 in which a film-forming process is performed, a vertically movable stage 14 configured to hold a substrate 100, a susceptor 50 held on the stage 14 and being configured to hold the substrate 100, and a stage stopper 17 configured to stop rising of the stage 14 and, when in contact with the susceptor 50, partitioning a film-forming space S in which the film-forming process is performed and a transporting space in which transport of the substrate 100 is performed. Further, the susceptor 50 includes an upper susceptor substrate holding portion 52B configured to hold the substrate 100, and an upper susceptor peripheral portion 52A arranged in a periphery of the upper susceptor substrate holding portion 52B, wherein a susceptor deposition prevention member 15 is provided on the upper susceptor peripheral portion 52A.