Embodiments of the disclosure may provide a method and apparatus for cleaning an epi-chamber at a low temperature so that residues are quickly eliminated from a surface of the epi-chamber after a performing a low temperature epitaxial deposition process. Some of the benefits of the present disclosure include flowing a chlorine containing gas to an improved epi-chamber having UV capability to chlorinate and quickly remove the epitaxial deposition residues at a low cleaning process temperature. As such, residues are decreased or removed from the epi-chamber such that further processing may be performed.

Provided is a dual deposition chamber apparatus for producing silicon material, the apparatus including a furnace, a cooling jacket, a deposition device, and a vacuum extraction device. The cooling jacket communicates with the furnace, defines a space above the furnace, and includes an opening communicating with the space. The deposition device includes at least one first deposition substrate and at least one second deposition substrate. The at least one first deposition substrate and the at least one second deposition substrate are arranged side by side in the space, and respectively include a first inner wall surface and a second inner wall surface inclined downwards relative to a vertical axis. An uneven area is formed on the first inner wall surface and the second inner wall surface. The vacuum extraction device communicates with the opening of the cooling jacket.

There is provided a technique that includes: a process vessel in which a substrate is processed; a lid capable of closing an opening provided at a lower portion of the process vessel; an elevator capable of elevating and lowering the lid; a heat insulator provided between the lid and the substrate and comprising a case of a cylindrical shape with a closed upper end; and a cooling gas supplier configured to purge an inside of the heat insulator by supplying a purge gas through a discharge port in the case while the opening is closed by the lid, and to cool the heat insulator by supplying a cooling gas through the discharge port while the opening is not closed by the lid.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.

A film forming apparatus according to an embodiment includes a reaction chamber; a pump; a storage container storing a discharged liquid; a first pipe having first and second end portions, the first end portion being connected to the reaction chamber, the first pipe extending in a first direction; a second pipe between the first pipe and the pump, having third and fourth end portions, extending in a second direction different from the first direction, the fourth end portion being connected to the pump; and a third pipe between the first pipe and the storage container, having fifth and sixth end portions, extending in a third direction different from the second direction, the fifth end portion being located on an imaginary straight line extending in the first direction from a center of the second end portion and the sixth end portion being connected to the storage container.

In the present chiller apparatus, a refrigerant flow path is branchably attached to a lower electrode serving as a large sample table, which copes with a case where the surface area of a sample is large in a configuration in which a plasma treatment device connected to a refrigerant cycle equipped with a heating device is applied. A control device transmits a heating adjustment control signal generated based on a result of a PID arithmetic operation including proportion, integration, and differentiation on a lower electrode refrigerant pipe refrigerant detection temperature detected from a temperature sensor provided in the vicinity of a refrigerant flow path of a heat insulating portion relative to the lower electrode of a lower electrode refrigerant pipe connected to be linked to the refrigerant cycle to a heating device and performs feedback control such that the lower electrode refrigerant pipe refrigerant detection temperature becomes a setting temperature.

A substrate processing apparatus includes a reaction tube processing a substrate, a heating part disposed on an outside of the reaction tube that heats the interior of the reaction tube, an insulating part disposed on an outside of the heating part, a plurality of flow channels installed in the insulating part and allows an air or a cooling medium to flow, and a ceiling part configured to cover an upper surface of the insulating part. The ceiling part includes a first member having a supply hole formed to communicate with the flow channels and to supply the air or cooling medium into the flow channels, and a second member having a space formed between the second member and the first member and allowing the air or the cooling medium to flow therein and having a partition part to partition the space into at least two spaces.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a heater heating a substrate in a reaction tube; a temperature controller controlling the heater; a valve controller adjusting an opening degree of a control valve to adjust a gas flow rate; and a main controller instructing a recipe including: (a) elevating an inner temperature of the reaction tube to a predetermined temperature at an elevating rate; (b) processing the substrate at the predetermined temperature; and (c) lowering the inner temperature of the reaction tube at a lowering rate. The main controller controls the temperature controller and the valve controller so that the inner temperature of the reaction tube changes in (a) or (c) at the elevating or lowering rate by heating in parallel with cooling by the gas supplied through the control valve.

Provided is a cooling device capable of controlling the temperature of an upper portion of a reactor, or more particularly, a gas supply device, for example, a shower head. The cooling device includes a separator configured to uniformly and efficiently cool the gas supply device.

Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss and power consumed when heating the chamber to a certain temperature and reducing safety problems such as burning of an operator.