Methods and systems for material deposition system equipment maintenance include evacuating a growth chamber of a material deposition system. The system comprises a growth chamber configured for a vacuum environment. A fluid circulation panel is inside the growth chamber, spaced apart from an inner surface of the growth chamber and comprising walls around an interior of the fluid circulation panel. A first port is in communication with the interior of the fluid circulation panel. A gas heater is coupled to the first port to heat and supply a heated gas into the interior of the fluid circulation panel to heat the walls of the fluid circulation panel. Methods include heating the gas with the gas heater and supplying the gas into the interior of the fluid circulation panel. The fluid circulation panel is heated, using the gas supplied to the interior of the fluid circulation panel.

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a housing defining a growth chamber, a crucible disposed within the growth chamber containing the melt of semiconductor or solar-grade material, a vacuum pump for drawing exhaust gases out of the growth chamber, and a fluid-cooled exhaust tube connected between the growth chamber and the vacuum pump.

The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370 C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.

A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.

The present disclosure generally relates to a process chamber for processing of semiconductor substrates. The process chamber includes an upper lamp assembly, a lower lamp assembly, a susceptor, an upper window disposed between the substrate support and the upper lamp assembly, a lower window disposed between the lower lamp assembly and the substrate support, an inject ring, and a base ring. The susceptor includes a movement assembly. The movement assembly includes a bearing feedthrough assembly. The bearing feedthrough assembly is a ferrofluidic feedthrough assembly and functions as a ferrofluidic bearing. The bearing feedthrough assembly includes a shaft coupled to the support shaft. The shaft is rotated within the bearing feedthrough assembly. The bearing feedthrough assembly is combined with a first linear spline and a second linear spline.

A system comprising: a semiconductor processing tool (102) comprising a process chamber (108); a valve module (104) configured to receive a fluid from the process chamber (108) and to selectably direct a flow of said fluid; and a cooling apparatus (402) configured to supply a flow of a cooling fluid to the process chamber (108); wherein the valve module (104) and the cooling apparatus (402) are arranged in a stacked configuration.

Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

A system and method for depositing a film within a reaction chamber are disclosed. An exemplary system includes a temperature measurement device, such as a pyrometer, to measure an exterior wall surface of the reaction chamber. A temperature of the exterior wall surface can be controlled to mitigate cleaning or etching of an interior wall surface of the reaction chamber.

According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamber 10 which an interior thereof can be made vacuum, the exhauster 20 that exhausts the interior of the chamber 10, the carrier 30 that circularly carries the workpiece W by a rotation table 31 provided inside the chamber 10, and the plurality of the plasma processor 40 that performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processor 40 each has the processing spaces 41 and 42 to perform the plasma processing, at least one of the plurality of the plasma processor 40 is the film formation processor 410 that performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processor 40 is the heater 420 that removes moisture in the chamber 10 by producing plasma and heating the interior of the chamber 10 via the rotation table 31 together with exhaustion by the exhauster 20 and rotation by the rotation table 31 in a condition the film formation process by the film formation processor 410 is not performed.

A material deposition system comprises a growth chamber configured for a vacuum environment. A fluid circulation panel is inside the growth chamber, spaced apart from an inner surface of the growth chamber and comprising walls around an interior of the fluid circulation panel. An injector pipe is in the interior of the fluid circulation panel and may include a plurality of holes along a length of the injector pipe. A first port may be in communication with the interior of the fluid circulation panel, where the injector pipe is inserted through the first port. A gas heater is configured to supply a heated gas into the interior of the fluid circulation panel to heat the walls of the fluid circulation panel and thereby heat the inner surface of the growth chamber.