The present invention relates to a coating device comprising a vacuum coating chamber for conducting vacuum coating processes, said vacuum coating chamber comprising: —one or more cooled chamber walls 1 having an inner side 1 b and a cooled side 1 a, —protection shields being arranged in the interior of the chamber as one or more removable shielding plates 2, which cover at least part of the surface of the inner side 1 b of the one or more cooled chamber walls 1, wherein at least one removable shielding plate 2 is placed forming a gap 8 in relation to the surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein: —thermal conductive means 9 are arranged filling the gap 8 in an extension corresponding to at least a portion of the total surface of the inner side 1 b of the cooled chamber wall 1 that is covered by said removable shielding plate 2, wherein the thermal conductive means 9 enable conductive heat transfer between said removable shielding plate 2 and the respectively covered cooled chamber wall 1.

An epitaxial reactor system includes a reactor, a cooling circuit, and a controller. The reactor includes a reaction chamber having an upper wall and a lower wall, an upper module positioned above the upper wall, and a lower module positioned below the lower wall. The cooling circuit includes a blower to circulate fluid within the upper module and the lower module and a damper selectably positioned to control an amount of fluid flow provided to each of the upper module and the lower module. The damper is coupled to a damper actuator that adjusts a position of the damper. The system further includes a controller configured to: receive epitaxial process information associated with the reactor, generate a blower output and a damper position output based on the epitaxial process information, transmit the blower output to the blower, and transmit the damper position output to the damper actuator.

According to one aspect of a technique the present disclosure, there is provided a substrate processing apparatus including: a substrate retainer provided with a heat insulating region at a lower portion thereof; a first reaction tube with open upper and lower ends; a second reaction tube with a closed upper end and an open lower end; a furnace opening flange provided with a holder in a first space between the first reaction tube and the second reaction tube; a heater covering the second reaction tube to heat a substrate arranged in the substrate retainer in the first reaction tube; a first highly reflective structure provided in the heat insulating region; and a second highly reflective structure arranged at the holder provided at the furnace opening flange and along an inner wall of the second reaction tube at a lower portion of the second reaction tube in the first space.

Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss and power consumed when heating the chamber to a certain temperature and reducing safety problems such as burning of an operator.

There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.

Mechanically fluidized systems and processes allow for efficient, cost-effective production of silicon coated particles having very low levels of contaminants such as metals and oxygen. These silicon coated particles are produced, conveyed, and formed into crystals in an environment maintained at a low oxygen level or a very low oxygen level and a low contaminant level or very low contaminant level to minimize the formation of silicon oxides and minimize the deposition of contaminants on the coated particles. Such high purity coated silicon particles may not require classification and may be used in whole or in part in the crystal production method. The crystal production method and the resultant high quality of the silicon boules produced are improved by the reduction or elimination of the silicon oxide layer and contaminants on the coated particles.

An MOCVD system for growing a semiconductor layer on a substrate is provided. The MOCVD system includes an MOCVD growth chamber defined by a jacket having an interior surface and an exterior surface; a water flow chamber surrounding an exterior surface of the jacket of the MOCVD growth chamber; an electronic control system, wherein the electronic control system facilitates pulsed growth of the semiconductor layer; a supply tube comprising a head formed from a hollow structure defining a fitting end and an opposite, shower end, wherein the fitting end has an initial diameter that is less than a diameter at the shower end; and a susceptor configured to hold the substrate and facing the shower end of the supply tube, wherein the MOCVD system operates at a temperature greater than or equal to 1500° C.

The present disclosure relates to an apparatus for fluidised-bed chemical vapour deposition from a gaseous phase allowing the temperature of the fluidised bed to be stabilised during the deposition and also to an associated method for its implementation, the apparatus being characterised in that it comprises a porous thermal insulator present in an inlet zone and configured to be passed through by the gaseous phase, said porous thermal insulator having an effective thermal conductivity at 20° C. less than or equal to 3.5 W.Math.m-1.Math.K-1.

Methods and apparatus for an upper reflector assembly for use in a process chamber are provided herein. In some embodiments, an upper reflector assembly for use in a process chamber includes a reflector mounting ring; and upper reflector plate coupled to the reflector mounting ring and having an upper surface and lower surface, wherein the lower surface includes a plurality of linear channels extending substantially parallel to each other across the lower surface, and wherein the upper reflector plate includes air cooling slots extending from the upper surface to the lower surface.

The present disclosure relates to a support ring for a thermal processing chamber. The support ring has a polysilicon coating. The polysilicon coating is formed using a plasma spray deposition process.