A glass laminate includes a glass substrate including a first main surface and a second main surface, an antireflection layer on at least one of the first main surface and the second main surface, and an antifouling layer on the antireflection layer. The antireflection layer includes at least one low refractive index layer and at least one high refractive index layer, and the low refractive index layer and the high refractive index layer being alternately laminated. The antireflection layer includes an outermost layer farthest from the glass substrate and the outermost layer is the low refractive index layer including SiO.sub.2 as a main component. A distribution of fluorine concentration in a thickness direction of the outermost layer, measured by secondary ion mass spectrometry, has a peak.

An etching apparatus includes: a processing container configured to be evacuated to form a vacuum atmosphere in the processing container and including a wall that has an alloy composed of aluminum and an additive metal as a base material; a stage installed in the processing container and configured to mount a substrate having a metal film formed on a surface of the substrate; a gas supplier installed in the processing container and configured to supply an oxidizing gas that oxidizes the metal film and an etching gas that is -diketone to the stage to etch the oxidized metal film; and a wall heater configured to heat the wall to a temperature in a range of 60 degrees C. to 90 degrees C. when the etching gas is supplied from the gas supplier into the processing container.

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, process chamber is provided that includes a lid plate having a plurality of cooling channels formed therein, a pedestal, the pedestal having a plurality of cooling channels formed therein, and a showerhead, wherein the showerhead comprises a plurality of segments and each segment is at least partially surrounded by a shield.

Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss and power consumed when heating the chamber to a certain temperature and reducing safety problems such as burning of an operator.

Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

A substrate processing apparatus includes an inner wall formed of a heat conductive material, a quartz liner that covers the inner wall, and a cooling unit that cools the inner wall. A gap is formed between the inner wall and the quartz liner, and a sealing member is provided in the gap to seal the gap. The gap is filled with a heat conductive medium.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70 C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. The first gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplier is provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube. The controller controls the reaction tube.

Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

A film forming apparatus according to an embodiment includes a reaction chamber; a pump; a storage container storing a discharged liquid; a first pipe having first and second end portions, the first end portion being connected to the reaction chamber, the first pipe extending in a first direction; a second pipe between the first pipe and the pump, having third and fourth end portions, extending in a second direction different from the first direction, the fourth end portion being connected to the pump; and a third pipe between the first pipe and the storage container, having fifth and sixth end portions, extending in a third direction different from the second direction, the fifth end portion being located on an imaginary straight line extending in the first direction from a center of the second end portion and the sixth end portion being connected to the storage container.