The present invention relates to a substrate treatment apparatus including: a substrate support assembly having a spin head adapted to seat a substrate thereonto; fluid supply unit for supplying fluid to the substrate; a bowl assembly having a plurality of bowls overlaid another outwardly in a radial direction thereof and surrounding the substrate support assembly; an ascending and descending unit for moving up and down the bowl assembly; and a chamber for accommodating the substrate support assembly, the fluid supply unit, the bowl assembly, and the ascending and descending unit, wherein the chamber is configured to have a plurality of process exhaust parts for performing exhaust from the inside of the bowl assembly and an environment exhaust part for performing exhaust from the outside of the bowl assembly.

A substrate processing method performed by a substrate processing apparatus including: a processing container that processes a substrate; a gas supply that supplies a gas into the processing container; an exhaust device that exhausts a gas from an inside of the processing container; and a gas analyzer that analyzes the gas passing through an exhaust pipe that connects the processing container and the exhaust device. The method includes: performing a processing with a processing gas in the processing container by supplying the processing gas into the processing container; purging the processing gas in the processing container by supplying a purge gas into the processing container; analyzing the processing gas passing through the exhaust pipe by the gas analyzer during the purging the processing gas; and determining a condition of the purging the processing gas based on a result of analyzing the processing gas.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber (100) which has an inner space and in which an installation groove (130) is defined at a central side on a bottom surface (120); a substrate support (200) installed to be inserted into the installation groove (130) and having a top surface on which the substrate is seated; an inner lid part (300) which is installed to be movable vertically in the inner space and descends so that a portion thereof is in close contact with the bottom surface (120) adjacent to the installation groove (130) to define a sealed processing space (S2) in which the substrate support (200) is disposed therein.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber having an inner space; a substrate support on which a substrate is seated on a top surface thereof; an inner lid part which is installed to be vertically movable in the inner space and of which a portion is in close contact with the bottom surface of the process chamber to define a sealed processing space in which the substrate support is disposed; a gas supply part configured to supply a process gas to the processing space; and an inner lid driving part configured to drive the vertical movement of the inner lid part.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including; a process chamber (100) comprising a chamber body (110) which has an opened upper portion, in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and which comprises a gate (111) for loading/unloading a substrate (1) is disposed at one side thereof and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space, a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.

Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus of the present invention includes: a process chamber (100) including a chamber body (110) which has an opened upper portion and in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and a gate (111) configured to load/unload a substrate (1) is disposed at one side thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.

A deposition system includes an isolator or fume hood and a reactor for coating particles, the reactor including a rotatable reactor assembly positioned within the isolator or fume hood and including a reactor drum configured to hold a plurality of particles to be coated, an inlet tube, and an outlet tube. The reactor drum is configured to be detached from the inlet tube and the outlet tube by an operator while the reactor drum remains within the isolator or fume hood.

The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.