When pressure in a chamber is brought to atmospheric pressure and the chamber is filled with an inert gas atmosphere, the atmosphere in the chamber is sucked into an oxygen concentration analyzer through a sampling line such that oxygen concentration in the chamber is measured by the oxygen concentration analyzer. When the pressure in the chamber is reduced to less than atmospheric pressure, nitrogen gas is supplied to the oxygen concentration analyzer through an inert gas supply line simultaneously with suspending the measurement of oxygen concentration in the chamber. Even when the measurement of oxygen concentration in the chamber is suspended, reverse flow to the oxygen concentration analyzer from a gas exhaust pipe can be prevented, and the oxygen concentration analyzer can be prevented from being exposed to exhaust from the chamber. The configuration results in maintaining measurement accuracy of the oxygen concentration analyzer in a low oxygen concentration range.

There is provided a technique of cleaning an inside of a process container, including: (a) removing substances adhered in a process container set at a first temperature by supplying a first gas at a first flow rate into the process container and exhausting the inside of the process container; (b) physically desorbing and removing residual fluorine in the process container set at a second temperature by supplying a second gas at a second flow rate into the process container and exhausting the inside of the process container; and (c) chemically desorbing and removing residual fluorine in the process container set at a third temperature by supplying a third gas at a third flow rate into the process container and exhausting the inside of the process container.

A method of forming a silicon carbide-containing film on a substrate in a processing container. The method includes: accommodating the substrate in the processing container; adsorbing an organic compound on the substrate by supplying a carbon precursor gas to the processing container; and reacting the organic compound adsorbed on the substrate with a silicon compound by supplying a silicon precursor gas including the silicon compound to the processing container. The adsorbing the organic compound on the substrate and the reacting the organic compound are alternately repeated multiple times. In the adsorbing the organic compound, the vacuum exhaust is restricted, and then the restriction of the vacuum exhaust is released. The supply of the silicon precursor gas is stopped during the reacting the organic compound with the silicon compound, and the vacuum exhaust is not restricted after the supply of the silicon precursor gas is stopped.

A gas supply apparatus supplies a gas to a processing space where a gas processing is performed on a substrate. The gas supply apparatus includes: a gas supply source configured to supply a gas; a gas supply path configured to supply the gas to the processing space; an opening/closing valve configured to supply/stop the gas and provided in the gas supply path; a detector configured to detect a detectable index correlated with a Cv value of the opening/closing valve; an opening degree adjustment mechanism configured to adjust an opening degree of the opening/closing valve when the opening/closing valve is opened; and a controller configured to: store a relationship between the Cv value and the index; and control the opening degree by the opening degree adjustment mechanism such that when the index deviates from an appropriate range corresponding to an appropriate Cv value, the index falls within the appropriate range.

A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.

A liquid filter apparatus for gas/solid separation includes a housing with a filter chamber, a semiconductor process gas inlet, and a process gas outlet. The filter chamber forms a liquid reservoir, and the semiconductor process gas inlet and the process gas outlet are in communication with the filter chamber. The housing further includes a filter liquid inlet and a filter liquid outlet, which are in communication with the liquid reservoir for delivering and removing filter fluid, respectively, to and from the liquid reservoir.

A method of chemical vapor infiltration and deposition includes disposing a porous substrate within a reaction chamber, establishing a sub-atmospheric pressure within the reaction chamber, introducing a hydrocarbon reaction gas into a reaction zone of the reaction chamber to densify the porous substrate, withdrawing unreacted hydrocarbon reaction gas from the reaction chamber, the unreacted hydrocarbon reaction gas comprising hydrocarbon molecules having six or more carbon atoms, removing at least a portion of the hydrocarbon molecules having six or more carbon molecules from the unreacted hydrocarbon reaction gas by causing the portion of the hydrocarbon molecules having six or more carbon atoms to condense, and recirculating at least a portion of the unreacted hydrocarbon reaction gas back into the reaction zone.

A coating system for parylene deposition may include a chamber, a pumping system having a first and a second pump, where a pumping speed of the first and second pumps is based at least in part on an operating pressure; and a controller, the controller configured by machine-readable instructions to control activation of the first pump to initiate a pump down operation of the chamber, determine a cut-in pressure for switching operation from the first to the second pump, monitor an internal pressure of the chamber, switch operation to the second pump based at least in part on determining that the internal pressure of the chamber is at or below the cut-in pressure; and continue, using the second pump, the pump down operation of the deposition chamber until the internal pressure is at or below a target pressure for parylene deposition.

A substrate processing apparatus capable of minimizing the effect of a filling gas in a lower space on the processing of a substrate includes: a substrate supporting unit; a processing unit on the substrate supporting unit; and an exhaust unit connected to a reaction space between the substrate supporting unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate supporting unit meet each other outside the reaction space.

Systems and methods for reducing obstructions in an exhaust line of a sub-atmospheric chemical vapor deposition (SACVD) system are disclosed. Such obstruction may occur due to the reaction of a silicon precursor with ozone, which forms solid particles in the exhaust line. A catalytic apparatus is provided which catalyzes the decomposition of ozone (O.sub.3) to oxygen (O.sub.2). Due to the lower reactivity of O.sub.2, the formation of solid particles is reduced.