A thin-film-deposition machine includes a chamber, a carrier, an extraction ring and a dispensing unit. The chamber includes a containing space and an extraction channel disposed around the containing space. The extraction channel is partitioned into a first, a second and a third channel areas. The carrier is disposed within the containing space. The first channel area is connected to the third channel area via the second channel area. The third channel area is formed with a height greater than that of the first channel area. The extraction ring includes a plurality of extraction holes and a ring channel. The extraction holes are disposed around the carrier for extracting gas from the containing space to the extraction channel, sequentially via the extraction holes, the ring channel. Thereby an even and steady flow field can be formed above the carrier and the thickness uniformity of film deposition can be improved.

Described herein is a technique capable of improving the uniformity of the film formation among the substrates. According to the technique described herein, there is provided a configuration including: a reaction tube having a process chamber where a plurality of substrates are processed; a buffer chamber protruding outward from the reaction tube and configured to supply a process gas to the process chamber, the buffer chamber including: a first nozzle chamber where a first nozzle is provided; and a second nozzle chamber where a second nozzle is provided; an opening portion provided at a lower end of an inner wall of the reaction tube facing the buffer chamber; and a shielding portion provided at a communicating portion of the opening portion between the second nozzle chamber and the process chamber.

The present disclosure relates to an apparatus for trapping a reaction by-product created by an etching process, the apparatus being configured to trap a reaction by-product contained in an unreacted gas discharged after a process is performed in an etching process chamber during a semiconductor manufacturing process, trap and stack the reaction by-product in the form of powder at a position between a vacuum pump and a scrubber through multiple flow path switching structures, multiple trapping structures, and multiple stacking structures, and discharge only a gaseous unreacted gas to the scrubber.

A thin film deposition system includes a vacuum-preloaded gas bearing deposition head positioned in an external environment having an ambient pressure, the deposition head having an output face including a plurality of source openings through which gaseous materials are supplied and one or more exhaust openings. An exhaust pressure at the exhaust openings is less than ambient pressure, and a source pressure at the source openings is greater than that at the exhaust openings, with the pressure at the outermost source openings being greater than ambient pressure. A motion control system moves a substrate unit over the output face in the in-track direction without constraining its motion in a direction normal to the output face to a point where a center of gravity of the substrate unit is beyond the first edge of the output face.

The present disclosure relates to a trap device for a powder coating apparatus. The trap device includes a body part including an inlet through which exhaust gas containing lost powder is introduced, an outlet through which the exhaust gas is discharged, and an interior space in communication with the inlet and the outlet and a trap part that is located in the interior space of the body part and that traps the lost powder contained in the exhaust gas by a magnetic force.

A substrate liquid processing method includes holding a substrate W with a substrate holder 52; supplying a plating liquid L1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

A substrate processing apparatus, including a reaction chamber to process a substrate, a photon source to provide the reaction chamber with photons from the top side of the reaction chamber, a substrate support to support the substrate, a chemical inlet to provide the reaction chamber with a reactive chemical; and a chemical outlet to exhaust gases from the reaction chamber, the chemical outlet including a surface separating the reaction chamber from a surrounding space.

A system includes a plurality of inlets configured to dispense a gas into an enclosure of a substrate processing system. The enclosure is separate from processing chambers of the substrate processing system that process a semiconductor substrate. The system includes a controller configured to move into the enclosure a robot arm used to transport the semiconductor substrate between the processing chambers of the substrate processing system. The controller is configured to dispense the gas into the enclosure through one or more of the inlets in response to the robot arm being moved into the enclosure of the substrate processing system.

Provided is a technique including: a processing chamber that processes a substrate; a first gas supplier that supplies a metal-containing gas into the processing chamber; a second gas supplier that supplies a first oxygen-containing gas into the processing chamber; and an exhauster including a gas exhaust pipe and a trap that collects a component of the metal-containing gas contained in an exhaust gas using plasma, the exhauster discharging the exhaust gas from the processing chamber.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.