A method for producing a structure containing an array of MWCNTs on a metal substrate, comprising: (i) subjecting a metal substrate to a surface oxidation process at a first elevated temperature in an oxygen-containing atmosphere and under a first reduced pressure; (ii) subjecting the metal substrate to a surface reduction process at a second elevated temperature in a reducing atmosphere and under a second reduced pressure of at least 0.01 atm and less than 1 atm to result in reduction of the surface of said metal substrate, wherein the reducing atmosphere contains hydrogen gas; (iii) subjecting the metal substrate to a third reduced pressure of no more than 0.1 atm; and (iv) contacting the metal substrate, while at the third reduced pressure and under an inert or reducing atmosphere, with an organic substance at a third elevated temperature for suitable time to produce the MWCNTs on the metal substrate.

Provided is a method for manufacturing a group III nitride semiconductor substrate includes a substrate preparation step S10 of preparing a sapphire substrate, a heat treatment step S20 of performing a heat treatment on the sapphire substrate, a pre-flow step S30 of supplying a metal-containing gas over the sapphire substrate, a buffer layer forming step S40 of forming a buffer layer over the sapphire substrate under growth conditions of a growth temperature of 800° C. or higher and 950° C. or lower and a pressure of 30 torr or more and 200 torr or less, and a growth step S50 of forming a group III nitride semiconductor layer over the buffer layer under growth conditions of a growth temperature of 800° C. or higher and 1025° C. or lower, a pressure of 30 torr or more and 200 torr or less, and a growth speed of 10 μm/h or more.

A reaction chamber includes an enclosure having an interior coated with a metal nitride compound providing an average reflectivity to internal infra-red radiation of greater than 90%. The metal nitride compound can be titanium nitride, zirconium nitride, hafnium nitride, or a nitride of another metal, and can be between 0.1 and 10 microns thick, preferably between 4 and 5 microns thick. The layer does not tarnish, and can withstand reaction chamber temperatures up to at least 250° C., preferably up to 300° C. It is applied by a deposition process, such as PVD, CVD, thermal spray, or cathodic arc, wherein the enclosure itself is the metal nitride deposition enclosure. Uniformity of deposition can be improved by rotating the deposition source through T degrees and back through T±d, with a total of 360/d repetitions. The reactor can be a CVD reactor that deposits polysilicon onto a heated filament.

Electrode assemblies useful, inter alia, for mounting thin rods in Siemens reactors for manufacture of polysilicon, have a base segment which receives a holder segment, and an insert, interfacial surface(s) of which have depressions and/or elevations which reduce contact surface area, allowing the holder, base segment, insert, and optional intermediate segments to be constructed of materials having different thermal conductivities.

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10.sup.−5 volume % or more and 5.0×10.sup.−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

A novel composite electrode material and a method for manufacturing the same, a composite electrode containing said composite electrode material, and a Li-based battery comprising said composite electrode are disclosed. Herein, the composite electrode material of the present invention comprises: a core, wherein a material of the core is at least one selected from the group consisting of Sn, Sb, Si, Ge, C, and compounds thereof; and a carbon nanotube or a carbon fiber, wherein the carbon nanotube or the carbon fiber grows on a surface including a surface of the core.

The disclosed methods and apparatus improve the fabrication of solid fibers and microstructures. In many embodiments, the fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). The methods and systems generally employ the thermal diffusion/Soret effect to concentrate the low molar mass precursor at a reaction zone, where the presence of the high molar mass precursor contributes to this concentration, and may also contribute to the reaction and insulate the reaction zone, thereby achieving higher fiber growth rates and/or reduced energy/heat expenditures together with reduced homogeneous nucleation. In some embodiments, the invention also relates to the permanent or semi-permanent recording and/or reading of information on or within fabricated fibers and microstructures. In some embodiments, the invention also relates to the fabrication of certain functionally-shaped fibers and microstructures. In some embodiments, the invention may also utilize laser beam profiling to enhance fiber and microstructure fabrication.

A non-woven fabric is provided which includes a three-dimensional array of fibers. The three-dimensional array of fibers includes an array of standing fibers extending perpendicular to a plane of the non-woven fabric and attached to a base substrate, where the base substrate is one or more of an expendable film substrate, a metal base substrate, or a mandrel substrate. Further, the three-dimensional array of fibers includes multiple layers of non-woven parallel fibers running parallel to the plane of the non-woven fiber in between the array of standing fibers in a defined pattern of fiber layer orientations. In implementation, the array of standing fibers are grown to extend from the base substrate using laser-assisted chemical vapor deposition (LCVD).

An electromechanical system for detecting cancerous state of a single cell. The electromechanical system includes an aspirating mechanism, an electrical measurement mechanism, and a processing mechanism. The aspirating mechanism is configured to extract a single cell from a suspension of a plurality of suspended biological cells, hold the extracted single cell, and apply a mechanical aspiration to the held single cell by applying a suction force to the held single cell. The electrical measurement mechanism is configured to apply a set of electrical signals to the single cell before and after applying the mechanical aspiration, measure a first set of electrical responses from the held single cell corresponding to the applied set of electrical signals before the mechanical aspiration, and measure a second set of electrical responses from the mechanically aspirated single cell corresponding to the applied set of electrical signals before the mechanical aspiration. The processing mechanism, including a data processor, configured to detect cancerous state of the single cell based on a difference between the first set of electrical responses and the second set of electrical responses.

A multi-composition fiber is provided including a primary fiber material and an elemental additive material deposited on grain boundaries between adjacent crystalline domains of the primary fiber material. A method of making a multi-composition fiber is also provided, which includes providing a precursor laden environment, and promoting fiber growth using laser heating. The precursor laden environment includes a primary precursor material and an elemental precursor material.