Systems and methods are provided for interweaving carbon nanotubes. One embodiment comprises a layer of carbon nanotubes. The layer includes carbon nanotubes oriented in a first direction, as well as carbon nanotubes oriented in a second direction that crosses the first direction. The carbon nanotubes oriented in the second direction are interwoven through the carbon nanotubes oriented in the first direction.

Reactor for production of silicon, comprising a reactor volume, distinctive in that the reactor comprises or is operatively arranged to at least one means for setting a silicon-containing reaction gas for chemical vapor deposition (CVD) into rotation inside the reactor volume. Method for production of silicon.

A nanofiber structure is described that is composed of a substrate and a layer of oriented nanofibers. Nanofibers of the layer can be oriented in a common direction. An angle of the common direction can be selected so that nanofibers of the sheet are oriented at an angle with respect to an underlying substrate even if the underlying substrate is not planar. The angle can be used to adapt the sheets to demands as a thermal interface material.

Improved sealing of Siemens reactor electrodes which results in improved reactor campaign times, is accomplished by use of an electrically insulating ring in combination with two seals, a first seal located in a groove in the insulating ring or in a groove in the reactor base plate adjacent the insulating ring, and a second seal not contained in a groove.

A method of forming vertical graphene nanostripes comprising one or several monolayers and characterized by a thickness normal to the one or several monolayers, a length orthogonal to the thickness, and a width orthogonal to the thickness includes providing a substrate, subjecting the substrate to a reduced pressure environment in a processing chamber, and providing methane gas and C.sub.6-containing precursor. The method also includes flowing the methane gas and the C.sub.6-containing precursor into the processing chamber, establishing a partial pressure ratio of the C.sub.6-containing precursor to methane gas in the processing chamber, and generating a plasma. The method further includes exposing at least a portion of the substrate to the methane gas, the C.sub.6-containing precursor, and the plasma and growing the vertical graphene nanostripes coupled to the at least a portion of the substrate, wherein the thickness of the vertical graphene nanostripes extends parallel to the substrate.

Siemens CVD reactors are sealed in a manner which facilitates long production campaigns without refurbishing the seals, by the use of at least two seals, and an electrically insulating member having a thermal conductivity of from 1 to 200 W/mK, a sustained use temperature of at least 400 C., and a resistivity of more than 1.Math.10.sup.9 cm.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

A device for making a carbon nanotube array includes a chamber, a gas diffusing unit, and a gas transporting pipe. The chamber defines a first inlet and a second inlet spaced apart from each other. The gas diffusing unit is in the chamber, and the gas diffusing unit is a hollow structure and defines a space, a first through hole, and an outlet. The gas transporting pipe has a first end and a second end opposite to the first end. The first end extends out of the chamber from the second inlet, and the second end is in the chamber and connected to the first through hole. The present application also relates to a method for making the carbon nanotube array.

A method is provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor. The method includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electronically insulating material.

A method to prevent groundings of polycrystalline silicon rod holders to a reactor plate by the residual polymer in the following manner: first, providing a polycrystalline silicon reactor having a reactor plate with a plurality of silicon rod holders separated from the reactor plate with an insulation; next establishing an electrical circuit from a ground connection on the reactor plate connected to high potential test equipment to a high voltage probe; and finally completing the electrical circuit by contacting the high voltage probe to the holder. By this method any remaining polymer is physically removed as the polymer burns or is ejected by the energetic release caused by mild arcing from the holder to the reactor plate.