An apparatus and method for processing particulate matter by exposing the particulate matter to successive surface reactions of at least a first and a second gaseous precursor according to the principles of atomic layer deposition. The apparatus includes a vacuum chamber, a reaction chamber for particulate matter, wherein the reaction chamber is provided inside the vacuum chamber, a vibration mechanism for vibrating particulate matter inside the reaction chamber; and a precursor system arranged to supply the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors. The method includes the steps of supplying the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors, and vibrating particulate matter inside the reaction chamber.

An apparatus and method for processing particulate matter by exposing the particulate matter to successive surface reactions of at least a first and a second gaseous precursor according to the principles of atomic layer deposition. The apparatus includes a vacuum chamber, a reaction chamber for particulate matter, wherein the reaction chamber is provided inside the vacuum chamber, a vibration mechanism for vibrating particulate matter inside the reaction chamber; and a precursor system arranged to supply the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors. The method includes the steps of supplying the at least first and second gaseous precursors through the reaction chamber for subjecting the particulate matter to the at least first and second gaseous precursors, and vibrating particulate matter inside the reaction chamber.

An atomic layer deposition apparatus for coating on fine powders is disclosed, which includes a vacuum chamber, a shaft sealing device, and a driving unit. The shaft sealing device includes an outer tube and an inner tube arranged in an accommodating space of the outer tube. The driving unit drives the vacuum chamber to rotate through the outer tube to agitate the fine powders in a reaction space of the vacuum chamber. An air extraction line and an air intake line are arranged in a connection space of the inner tube. The air extraction line is used to extract gas from the reaction space. The air intake line is used to transport non-reactive gas to the reaction space to blow the fine powders around in the reaction space and precursor gas to the reaction space to form thin films with uniform thickness on the surface of the fine powders.

A method for producing coated particles by atomic layer deposition, including the steps of: a) dispersing particles having reactive groups on their surface in an organic solvent, b) adding a first reactant in excess to the reactive groups on the surface, c) mixing the dispersion to react the first reactant with reactive groups on the surface of the particles, d) removing the excess of the first reactant by vacuum or by distillation or by azeotropic distillation, e) adding a second reactant in excess to the reactive groups on the surface obtained in step d), f) mixing the dispersion to react the second reactant with the first reactant on the surface of the particles, g) removing the excess of the second reactant by vacuum or by distillation or by azeotropic distillation.

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

A reactor for plasma-assisted chemical vapor deposition includes a plasma duct for containing one or more substrates to be coated by ions; an arc discharge generation system for generating a flow of electrons through the plasma duct from a proximal end toward a distal end of the plasma duct; a gas inlet coupled to the distal end for receiving a reactive gas; a gas outlet coupled to the proximal end for removing at least a portion of the reactive gas to generate a flow of the reactive gas through the plasma duct from the distal end toward the proximal end, to generate the ions from collisions between the electrons and the reactive gas; and a separating baffle positioned for restricting flow of the reactive gas out of the plasma duct to maintain a high pressure in the plasma duct to increase rate of deposition of the ions onto the substrates.

A process for conducting vapor phase deposition is disclosed. The process separates a series of reactions through a sequence of reaction reservoirs. The reactor includes a reactive precursor reservoir beneath a powder reservoir separated by valve means. A reactive precursor is charged into the reactive precursor reservoir and a powder is charged into the powder reservoir. The pressures are adjusted so that the pressure in the reactive precursor reservoir is higher than that of the powder reservoir. The valve means is opened, and the vapor phase reactant fluidized the powder and coats its surface. The powder falls into the reactive precursor reservoir. The apparatus permits vapor phase deposition processes to be performed semi-continuously.

A process for conducting vapor phase deposition is disclosed. The process separates a series of reactions through a sequence of reaction reservoirs. The reactor includes a reactive precursor reservoir beneath a powder reservoir separated by valve means. A reactive precursor is charged into the reactive precursor reservoir and a powder is charged into the powder reservoir. The pressures are adjusted so that the pressure in the reactive precursor reservoir is higher than that of the powder reservoir. The valve means is opened, and the vapor phase reactant fluidized the powder and coats its surface. The powder falls into the reactive precursor reservoir. The apparatus permits vapor phase deposition processes to be performed semi-continuously.

Arrangements are provided for assembling multiple substrates for coating within a fluidized bed coater so as to deposit a coating of uniform thickness across the entire exterior surface thereof. One embodiment includes a method for coating orthopedic implants having convex and concave surfaces with pyrocarbon by pyrolytic decomposition of a hydrocarbon.

Arrangements are provided for assembling multiple substrates for coating within a fluidized bed coater so as to deposit a coating of uniform thickness across the entire exterior surface thereof. One embodiment includes a method for coating orthopedic implants having convex and concave surfaces with pyrocarbon by pyrolytic decomposition of a hydrocarbon.