An atomic layer deposition device for massively coating micro-nano particles, includes a reaction chamber and a particle container, in which an inlet port is provided at a lower end of the reaction chamber, and an inlet pipe for introducing a precursor or a carrier gas is provided in the inlet port; a chamber door is provided at an upper end of the reaction chamber, so that the particle container can be freely placed in or removed out of the reaction chamber; an air inlet hole is provided at a lower end of the particle container, and the inlet pipe enters the particle container through the air inlet hole.

Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.

Polycrystalline silicon with low contamination by impurities, especially boron and phosphorus, is manufactured by the Siemens process or by the fluidized bed process, in which deposition of polycrystalline silicon takes place in a reactor maintained within a clean room of the 1 to 100,000 class, and air entering the facility enclosing the reactors is filtered by a multiple stage filtration system wherein coarse and fine filter elements contain less than 0.1% by weight of boron and phosphorus and less than 0.01% by weight of arsenic and aluminum. Following production of the polycrystalline silicon, the polycrystalline silicon may be further treated by steps such as comminution, classifying, wet-chemical treatment, and packing, all these further steps also preferably taking place within a clean room of the 1 to 100,000 class.

A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state.

A process for preparing granular polysilicon using a fluidized bed reactor is disclosed. The upper and lower spaces of the bed are defined as a reaction zone and a heating zone, respectively, with the height of the reaction gas outlet being selected as the reference height. The invention maximizes the reactor productivity by sufficiently providing the heat required and stably maintaining the reaction temperature in the reaction zone, without impairing the mechanical stability of the fluidized bed reactor. This is achieved through electrical resistance heating in the heating zone where an internal heater is installed in a space in between the reaction gas supplying means and the inner wall of the reactor tube, thereby heating the fluidizing gas and the silicon particles in the heating zone. The heat generated in the heating zone is transferred to the reaction zone by supplying the fluidizing gas at such a rate that the silicon particles can be intermixed between the reaction zone and the heating zone in a continuous, fluidized state.

A method of producing a silicate fluorescent material, the method includes: providing a raw material mixture that contains an M source containing M, an Mg source, an Eu source, and an Si source, and optionally an Mn source, obtaining at least one core particle comprising a silicate fluorescent composition having a formula: (M.sub.1-cEu.sub.c).sub.3a(Mg.sub.1-dMn.sub.d).sub.bSi.sub.2O.sub.8, in which M is at least one element selected from the group consisting of Ca, Sr, and Ba, and a, b, c, and d are numbers respectively satisfying 0.93≤a≤1.07, 0.90≤b≤1.10, 0.016≤c≤0.090, and 0≤d≤0.22; using a chemical vapor deposition method, depositing aluminum oxide on surfaces of the at least one core particle; and heat treating at a temperature in a range of 210° C. to 490° C. in an oxygen-containing atmosphere.

A method of producing a silicate fluorescent material, the method includes: providing a raw material mixture that contains an M source containing M, an Mg source, an Eu source, and an Si source, and optionally an Mn source, obtaining at least one core particle comprising a silicate fluorescent composition having a formula: (M.sub.1-cEu.sub.c).sub.3a(Mg.sub.1-dMn.sub.d).sub.bSi.sub.2O.sub.8, in which M is at least one element selected from the group consisting of Ca, Sr, and Ba, and a, b, c, and d are numbers respectively satisfying 0.93≤a≤1.07, 0.90≤b≤1.10, 0.016≤c≤0.090, and 0≤d≤0.22; using a chemical vapor deposition method, depositing aluminum oxide on surfaces of the at least one core particle; and heat treating at a temperature in a range of 210° C. to 490° C. in an oxygen-containing atmosphere.

A reactor for coating particles includes a vacuum chamber configured to hold particles to be coated, a vacuum port to exhaust gas from the vacuum chamber via the outlet of the vacuum chamber, a chemical delivery system configured to flow a process gas into the particles via a gas inlet on the vacuum chamber, one or more vibrational actuators located on a first mounting surface of the vacuum chamber, and a controller configured to cause the one or more vibrational actuators to generate a vibrational motion in the vacuum chamber sufficient to induce a vibrational motion in the particles held within the vacuum chamber.

An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.

An atomic layer deposition apparatus for coating particles is disclosed. The atomic layer deposition apparatus includes a vacuum chamber, a shaft sealing device, and a driving unit. The driving unit is connected to and drives the vacuum chamber to rotate through the shaft sealing device. The vacuum chamber includes a reaction space for accommodating a plurality of particles, wherein the reaction space has a polygonal columnar shape or a wavy circular columnar shape. An air extraction line and an air intake line are fluidly connected to the vacuum chamber, and the air intake line is used to transport a precursor gas and a non-reactive gas to the reaction space. Through the special shape of the reaction space together with the non-reactive gas, the particles in the reaction space can be effectively stirred to form a thin film with a uniform thickness on the surface of each particle.