Disclosed are vapor delivery systems comprise a housing body defining an interior volume therein, a plurality of flow resistors for receiving a carrier gas, to generate gas distribution lines in the interior volume, at least two surfaces having the solid or liquid precursor applied thereto to allow passage of the carrier gas thereover along the gas distribution lines to mix with a solid or liquid precursor vapor, a gas-collecting device downstream of the gas distribution lines to deliver a mixture of the carrier gas and the solid or liquid precursor vapor out of the system, and a flow controller fluidically connected to a carrier gas source to control a feed flow rate of the carrier gas feeding into the interior volume. A gas distribution flow rate along each gas distribution line is controlled by the feed flow rate of the carrier gas feeding into the interior volume.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

A dry powder MOCVD vapor source system is disclosed that utilizes a gravimetric powder feeder, a feed rate measurement and feeder control system, an evaporator and a load lock system for continuous operation for thin film production, particularly of REBCO type high temperature superconductor (HTS) tapes.

Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.

A nitride-based electronic device includes an oxide cladding layer, a nitride cladding layer, and a nitride active region layer arranged between the oxide cladding layer and the nitride cladding layer. First and second metal contacts are electrically coupled to the nitride active region layer. The nitride-based electronic device can be formed in a system in which a non-reactive chamber is arranged between an oxide reaction chamber and a nitride reaction chamber so that oxide and nitride layers can be grown without exposing the device to the environment between growth of the oxide and nitride layers.

A tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The tray is configured to be able to have a reduced profile size when compressed to enhance the ease of which the tray can be inserted into the ampoule, and the tray is configured to expand in size to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the tray and ultimately to the solid precursor materials disposed on the tray.

A modular tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The modular tray is configured with separate components which can enhance the ease of which the modular tray can be inserted into the ampoule, and the tray is configured to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the modular tray and ultimately to the solid precursor materials disposed on the modular tray.

A modular tray for an ampoule of a delivery system of solid precursor materials used in Atomic Layer Deposition (ALD) processes, Chemical Vapor Deposition (CVD) processes or both. The modular tray is configured with separate components which can enhance the ease of which the modular tray can be inserted into the ampoule, and the tray is configured to make improved contact with inner wall surfaces of the ampoule to provide improved heat transfer from the inner wall to the modular tray and ultimately to the solid precursor materials disposed on the modular tray.

There is provided a film-forming apparatus including: a processing container, wherein a reaction gas is supplied into the processing container; a stage disposed inside the processing container and provided with a substrate heating part, the stage being configured to place a substrate thereon; a support member configured to support the stage from a rear surface of the stage, wherein the rear surface faces a placement surface on which the substrate is placed; a temperature control member disposed on the rear surface of the stage and including a hollow portion formed to cover the support member, the temperature control member configured to have a controllable temperature; a heat-insulating member disposed between the stage and the temperature control member; and a purge gas supply part configured to supply a purge gas to a first gap formed between the support member and the temperature control member.