A system and method for reducing thermal transfer in a dual ampoule system. The dual ampoule system includes a first ampoule, a second ampoule, and a planar heat shield. The planar heat shield is positioned between the first ampoule and the second ampoule, where the planar heat shield is configured to resist thermal transfer between the first ampoule and the second ampoule.

According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

According to one embodiment, a deposition device includes a stage, a deposition head opposed to the stage, and a chamber accommodating the stage and the deposition head. The deposition head comprises a deposition source heating a material and generating vapor, a nozzle connected to the deposition source to emit the vapor generated by the deposition source, a control plate comprising a sleeve surrounding the nozzle, and a movement mechanism moving the control plate along an extension direction of the sleeve.

Provided is a concentration control module that improve responsiveness of concentration control of a vaporization system, and is used in a vaporization system. The concentration control module includes a concentration measuring part configured to measure a concentration of a source gas; a valve provided in a lead-out pipe configured to lead out the source gas from the tank; a pressure target value calculating part configured to calculate a pressure target value inside the tank by using a concentration target value of the source gas, and a concentration measured value of the concentration measuring part; a delay filter configured to generate a pressure control value by applying a predetermined time delay to the pressure target value obtained by the pressure target value calculating part; and a valve control part configured to feedback-control the valve by using a deviation between the pressure control value obtained by the delay filter, and a pressure inside the tank.

Provided is a concentration control module that improve responsiveness of concentration control of a vaporization system, and is used in a vaporization system. The concentration control module includes a concentration measuring part configured to measure a concentration of a source gas; a valve provided in a lead-out pipe configured to lead out the source gas from the tank; a pressure target value calculating part configured to calculate a pressure target value inside the tank by using a concentration target value of the source gas, and a concentration measured value of the concentration measuring part; a delay filter configured to generate a pressure control value by applying a predetermined time delay to the pressure target value obtained by the pressure target value calculating part; and a valve control part configured to feedback-control the valve by using a deviation between the pressure control value obtained by the delay filter, and a pressure inside the tank.

A Metalorganic chemical vapor phase epitaxy or vapor phase deposition apparatus, having a first gas source system, a reactor, an exhaust gas system, and a control unit, wherein the first gas source system has a carrier gas source, a bubbler with an organometallic starting compound, and a first supply section leading to the reactor either directly or through a first control valve, the carrier gas source is connected to an inlet of the bubbler through a first mass flow controller by a second supply section, an outlet of the bubbler is connected to the first supply section, and the carrier gas source is connected to the first supply section through a second mass flow controller by a third supply section, the first supply section is connected to an inlet of the reactor through a third mass flow controller.

A shower plate that includes a plate-like member provided at a top of a processing chamber is provided. The shower plate has first holes communicating with a first flow path in the shower plate. The shower plate includes first chamber valves provided with the respective first holes. The shower plate has second holes communicating with a second flow path in the shower plate. The shower plate includes second chamber valves provided with the respective second holes. The shower plate has third holes provided in the plate-like member to correspond to the first holes and the second holes. The shower plate includes third chamber valves provided with the respective third holes. The first chamber valves, the second chamber valves, and the third chamber valves are piezoelectric elements.

A shower plate that includes a plate-like member provided at a top of a processing chamber is provided. The shower plate has first holes communicating with a first flow path in the shower plate. The shower plate includes first chamber valves provided with the respective first holes. The shower plate has second holes communicating with a second flow path in the shower plate. The shower plate includes second chamber valves provided with the respective second holes. The shower plate has third holes provided in the plate-like member to correspond to the first holes and the second holes. The shower plate includes third chamber valves provided with the respective third holes. The first chamber valves, the second chamber valves, and the third chamber valves are piezoelectric elements.

Methods and apparatus for self-assembled monolayer (SAM) deposition are provided herein. In some embodiments, an apparatus for self-assembled monolayer (SAM) deposition includes: a chamber enclosing a processing volume; a substrate support disposed in the chamber and configured to support a substrate in the processing volume; a gas distribution system coupled to the chamber and configured to distribute a process gas into the processing volume; a first SAM precursor source fluidly coupled to the gas distribution system to provide a first SAM precursor as a part of the process gas; and a second SAM precursor source fluidly coupled to the gas distribution system to provide a second SAM precursor, different than the first SAM precursor, as a part of the process gas, wherein the first and second SAM precursor sources are independently controllable to control a relative percentage of the first and second SAM precursors in the process gas with respect to each other.

Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.