The present invention relates to a ZnMg alloy-coated steel sheet with excellent blackening resistance and excellent coating adhesion and to a method for manufacturing same. Provided are a ZnMg alloy-coated steel sheet with excellent blackening resistance and excellent adhesion and a method for manufacturing same, the steel sheet comprising: a substrate steel sheet; a ZnFe intermetallic compound layer formed on the substrate steel sheet; a first ZnMg coating layer formed on the ZnFe intermetallic compound layer and comprising a ZnFe intermetallic compound in which the content of Zn is 95% by weight or higher; a second ZnMg coating layer formed on the first ZnMg coating layer and comprising a ZnMg intermetallic compound in which the content of Zn is 80 to 95% by weight; and an oxide film formed on the second ZnMg coating layer and comprising a metallic oxide.

The present invention relates to a ZnMg alloy-coated steel sheet with excellent blackening resistance and excellent coating adhesion and to a method for manufacturing same. Provided are a ZnMg alloy-coated steel sheet with excellent blackening resistance and excellent adhesion and a method for manufacturing same, the steel sheet comprising: a substrate steel sheet; a ZnFe intermetallic compound layer formed on the substrate steel sheet; a first ZnMg coating layer formed on the ZnFe intermetallic compound layer and comprising a ZnFe intermetallic compound in which the content of Zn is 95% by weight or higher; a second ZnMg coating layer formed on the first ZnMg coating layer and comprising a ZnMg intermetallic compound in which the content of Zn is 80 to 95% by weight; and an oxide film formed on the second ZnMg coating layer and comprising a metallic oxide.

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A polymer substrate having deposited on its surface a reaction product of a precursor material obtained or obtainable by a method for preparation of polymer, and to the use of the polymer having improved antibacterial properties and/or antiviral properties or of the polymer having improved antibacterial properties and/or antiviral properties obtained or obtainable by the method for medical applications, antibiofouling applications, hygiene applications, food industry applications, industrial or computer related applications, consumer goods applications and appliances, public and public transport applications, underwater, water sanitation or seawater applications.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 110.sup.21 cm.sup.3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 110.sup.18 cm.sup.3, and a carbon concentration at the position is equal to or less than 110.sup.18 cm.sup.3.

A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 110.sup.21 cm.sup.3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 110.sup.18 cm.sup.3, and a carbon concentration at the position is equal to or less than 110.sup.18 cm.sup.3.

An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

Transparent conductive oxide thin films having a plurality of layers with voids located at each interface. Smooth TCO surfaces with no post growth processing and a largely tunable haze value. Methods of making include applying multiple layers of a conductive oxide onto a surface of a substrate, and interrupting the application between the multiple layers to form a plurality of voids at the interfaces.