Methods for filling gaps with dielectric material involve deposition using an atomic layer deposition (ALD) technique to fill a gap followed by deposition of a cap layer on the filled gap by a chemical vapor deposition (CVD) technique. The ALD deposition may be a plasma-enhanced ALD (PEALD) or thermal ALD (tALD) deposition. The CVD deposition may be plasma-enhanced CVD (PECVD) or thermal CVD (tCVD) deposition. In some embodiments, the CVD deposition is performed in the same chamber as the ALD deposition without intervening process operations. This in-situ deposition of the cap layer results in a high throughput process with high uniformity. After the process, the wafer is ready for chemical-mechanical planarization (CMP) in some embodiments.

A controller includes an accumulation determiner configured to determine a first accumulation value that indicates an amount of accumulation of material on surfaces within a processing chamber and a pressure controller configured to obtain the first accumulation value, obtain at least one of a setpoint pressure an etching step and a duration of the etching step, and, to control the pressure within the processing chamber during the etching step, adjust a control parameter based on (i) the first accumulation value and (ii) the at least one of the setpoint pressure and the duration of the etching step.

A vaporization supply device includes a vaporizer for heating and vaporizing a liquid raw material L, a flow rate controller for controlling a flow rate of the gas supplied from the vaporizer to a gas supply destination, and a controller for heating the inside of the vaporizer to obtain a necessary gas flow rate, and performing a feedback control so that a pressure becomes equal to or higher than a predetermined value. The controller is configured so as to stop the feedback control at the time point when the flow rate control by the flow rate controller starts, then heat the liquid raw material by an amount of heat provided to the vaporizer more than the heat that has already been provided immediately before the feedback control ends, and change to the feedback control after a predetermined time has elapsed from the time point when the flow rate control by the flow rate controller starts.

An apparatus for use in a chemical vapor infiltration process is disclosed. The apparatus can optionally include any one or combination of a first reaction chamber, a mixing chamber and a second reaction chamber. The mixing chamber can have at least a first inlet, a second inlet and an outlet. The first inlet can be in fluid communication with the first reaction chamber and receive a second precursor gas. The second inlet can be in fluid communication to receive a third precursor gas. The second precursor gas and the third precursor gas can mix within the mixing chamber before passing to the outlet and into the second reaction chamber. The second reaction chamber can contain a substrate that can receive a film deposition from reaction of the second precursor gas and the third precursor gas within the second reaction chamber.

A method of preparing a positive electrode active material for a secondary battery includes preparing a lithium composite transition metal oxide which includes nickel, cobalt, and manganese and contains 60 mol % or more of the nickel among all metals except lithium, adding a moisture absorbent and the lithium composite transition metal oxide into an atomic layer deposition (ALD) reactor, and adding a coating metal precursor into the atomic layer deposition (ALD) reactor and forming a metal oxide coating layer on surfaces of particles of the lithium composite transition metal oxide by atomic layer deposition (ALD).

The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.

This invention is directed to a corrosion-resistant permanent magnet, to a method for producing a corrosion-resistant permanent magnet, and to an intravascular blood pump comprising the magnet. The magnet is corrosion resistant due to a composite coating comprising a first layer structure and optionally a second layer structure on the first layer structure, each layer structure comprising an inorganic layer, a linker layer on the inorganic layer, and an organic layer formed from poly(2-chloro-p-xylylene) on the linker layer. The inorganic layers comprise aluminum and/or aluminum oxide.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

A cutting tool includes a substrate and a coating film, wherein the coating film has a first layer formed from a plurality of hard grains, the hard grains are made of TiSiCN having a cubic crystal structure, the hard grains have a lamellar structure in which a layer having a relatively high silicon concentration and a layer having a relatively low silicon concentration are alternately stacked, and a maximum value of percentage of number A.sub.Si of silicon atoms to a sum of the number A.sub.Si of silicon atoms and number A.sub.Ti of titanium atoms in a grain boundary region between the hard grains, {A.sub.Si/(A.sub.Si+A.sub.Ti)}×100, is larger than an average value of percentage of number B.sub.Si of silicon atoms to a sum of the number B.sub.Si of silicon atoms and number B.sub.Ti of titanium atoms in the first layer, {B.sub.Si/(B.sub.Si+B.sub.Ti)}×100.