There is provided a filter device. In the filter device, a plurality of coils are arranged coaxially. Each of a plurality of wirings is electrically connected to one end of each of the coils. Each of a plurality of capacitors is connected between the other end of each of the coils and the ground. A housing is electrically grounded and configured to accommodate therein the coils. Further, each of the wirings at least partially extends into the housing and has a length that is adjustable in the housing.

Methods of depositing an inorganic material on an extrusion die including positioning an extrusion die within a vapor deposition chamber, positioning an impedance disk over a face of the extrusion die, the impedance disk having a plurality of through holes and the face of the extrusion die having a plurality of slots defined by a plurality of extrusion die pins, and flowing one or more deposition gases through the plurality of through holes and into the plurality of slots to deposit inorganic particles on side walls of the plurality of pins. The total impedance to the flow of the deposition gases across the impedance disk and the extrusion die may be equal to a disk impedance of the impedance disk plus a die impedance of the extrusion die, and the disk impedance may be at least 40% of the total impedance to the flow of the deposition gases.

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace having a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with a plurality of vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the processing chamber.

Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Apparatus for atomic layer deposition on a surface of a substrate includes a precursor injector head. The precursor injector head includes a precursor supply and a deposition space that in use is bounded by the precursor injector head and the substrate surface. The precursor injector head is arranged for injecting a precursor gas from the precursor supply into the deposition space for contacting the substrate surface. The apparatus is arranged for relative motion between the deposition space and the substrate in a plane of the substrate surface. The apparatus is provided with a confining structure arranged for confining the injected precursor gas to the deposition space adjacent to the substrate surface.

Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.