Provided by the invention disclosure is a coating equipment. The coating equipment comprises a reaction chamber body provided with a reaction chamber, a gas supply part configured to supply gas to the reaction chamber, a pumping device configured to communicate with the reaction chamber, a pulse power supply adapted to provide the reaction chamber body with a pulsed electric field and a radio frequency power supply adapted to provide the reaction chamber body with a radio frequency electric field, wherein the reaction chamber is adapted to accommodate a plurality of workpiece. When the pulse power supply and the radio frequency power supply are turned on, the gas in the reaction chamber body is ionized under the radio frequency electric field and the pulsed electric field to generate plasma, and the plasma is deposited on the surface of the workpieces.

Provided by the invention disclosure is a coating equipment. The coating equipment comprises a reaction chamber body provided with a reaction chamber, a gas supply part configured to supply gas to the reaction chamber, a pumping device configured to communicate with the reaction chamber, a pulse power supply adapted to provide the reaction chamber body with a pulsed electric field and a radio frequency power supply adapted to provide the reaction chamber body with a radio frequency electric field, wherein the reaction chamber is adapted to accommodate a plurality of workpiece. When the pulse power supply and the radio frequency power supply are turned on, the gas in the reaction chamber body is ionized under the radio frequency electric field and the pulsed electric field to generate plasma, and the plasma is deposited on the surface of the workpieces.

A liquid chemical supply device, system and method capable of processing a gas having first and second canisters connected, respectively, to semiconductor manufacturing apparatus by way of first and second supply lines, to provide liquid chemicals stored therein to the semiconductor manufacturing apparatus; first and second push lines connected to the first and second canisters, respectively, and configured to provide a push gas to the first and second canisters to discharge the chemicals into the first and second supply lines, and a gas processing unit in fluid communication with the first supply line and the second push line, in order for the chemical in the first supply line containing a gas therein to be provided to and stored in the second canister through the second push line.

Chucks for supporting semiconductor wafers during certain processing operations are disclosed. The chucks may include a recessed region near the outer perimeter of the wafer that has one or more surfaces that face towards the wafer but are recessed therefrom so as to not contact the wafer around the perimeter of the wafer. The use of such a recessed region prevents direct thermally conductive contact between the chuck and the wafer, thereby allowing the wafer to achieve a more uniform temperature distribution in certain process conditions. This has the further effect of causing certain processing operations to be more uniform with respect to edge-center deposition (or etch) layer thickness.

An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.

Systems, methods, and apparatus for encapsulating objects like that of microelectronic components and batteries. The system includes three successive layers that include a first covering layer composed of an electrically insulating material deposited by atomic layer deposition, which at least partly covers the object, a second covering layer that includes parylene and/or polyimide, and which is disposed on the first covering layer, and a third covering layer deposited on the second covering layer in such a way as to protect the second encapsulation layer, namely, with respect to oxygen, and thereby increase the service life of the object.

A semiconductor processing system for delivering large capacity vaporized precursor from solid or liquid precursor source is disclosed. The system utilizes a carrier gas to feed the vaporized precursor to a remotely located process zone where multiple process modules are disposed. The system comprises a first and second buffer volumes configured to reduce pressure drop and increase delivery rates. A method for delivering a large capacity vaporized precursor to the remotely located process zone are also disclosed.

A semiconductor processing system for delivering large capacity vaporized precursor from solid or liquid precursor source is disclosed. The system utilizes a carrier gas to feed the vaporized precursor to a remotely located process zone where multiple process modules are disposed. The system comprises a first and second buffer volumes configured to reduce pressure drop and increase delivery rates. A method for delivering a large capacity vaporized precursor to the remotely located process zone are also disclosed.

In some aspects, methods for forming a germanium thin film using a cyclical deposition process are provided. In some embodiments, the germanium thin film is formed on a substrate in a reaction chamber, and the process includes one or more deposition cycles of alternately and sequentially contacting the substrate with a vapor phase germanium precursor and a nitrogen reactant. In some embodiments, the process is repeated until a germanium thin film of desired thickness has been formed.