A heating apparatus including a rotating stage, a plurality of wafer carriers, a first heater, and a second heater is provided. The rotating stage includes a rotating axis. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate on the rotating axis. The first heater is disposed under the rotating stage. The first heater includes a first width in a radial direction of the rotating stage. The second heater is disposed under the rotating stage. The second heater and the first heater are separated from each other. The second heater includes a second width in the radial direction of the rotating stage, and the first width is not equal to the second width. A chemical vapor deposition (CVD) system using the heating apparatus is also provided.

Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

Various kinematic mounts used to mount a carrier ring carrying a substrate to a pedestal within a processing chamber. Each of the various kinematic mounts provide a smooth gliding action during mounting, reduce the generation of unwanted particles and prevent free-fall of the carrier ring to the pedestal.

A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is accommodated; a substrate mounting table provided in the process chamber and heated by a heater; and a substrate mounting table cover arranged on an upper surface of the substrate mounting table and configured such that the substrate is placed on an upper surface of the substrate mounting table cover, wherein the substrate mounting table cover is made of silicon carbide and is provided with a silicon oxide layer of a first thickness at least on the upper surface of the substrate mounting table cover where the substrate is placed.

The present invention relates to a susceptor including a substrate including a carbon material and having one main surface on which a silicon water is to be placed, and another main surface facing the one main surface, in which an entire surface of the substrate is covered with a thin film including silicon carbide, the one main surface has an emissivity variation of 3% or less, and a ratio of an average emissivity between the one main surface and the another main surface facing the one main surface is from 1:1 to 1:0.8.

The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

A film forming apparatus according to one aspect of the present disclosure includes a processing chamber, a gas supply pipe extending vertically in the processing chamber and including gas holes, and a boat configured to accommodate substrates including product substrates in a vertical direction in the processing chamber. The film forming apparatus forms a film on each of the substrates by use of gas supplied from the gas holes, each of the substrates corresponding to respective one or more of gas holes. The gas holes that are arranged in a height range in which the product substrates are situated include first gas holes that are opened at a same height, the first gas holes being oriented at respective angles such that respective imaginary lines passing through the first holes and a central axis of the gas supply pipe are at a same angle relative to an imaginary line.

Disclosed are a method for preheating a substrate treating apparatus capable of shortening a preheating time and simultaneously performing a maintenance operation, and a computer program for the same. The method includes setting a parameter related to preheating of a preheating target component among components constituting the substrate treating apparatus; and preheating the preheating target component based on the set parameter, wherein a movement range of the preheating target component is limited to a value within a movable range.