A display apparatus includes a substrate including first and display areas, wherein the first display area includes first and second pixel areas and a transmission area; a first pixel disposed in the first pixel area and including a first pixel electrode, a first counter electrode, and a first intermediate layer between the first electrode and the first counter electrode; and a second pixel disposed in the second pixel area and including a second pixel electrode, a second counter electrode, and a second intermediate layer between the second pixel electrode and the second counter electrode. The first and second counter electrodes are disposed in the first and second pixel areas, and the first and the second counter electrodes include a first contact area where the first and the second pixel areas are adjacent to each other. A method of manufacturing the display apparatus is provided.

A vertical wafer boat for a diffusion process is provided. The vertical wafer boat includes a plurality of wafer racks. Each of the plurality of wafer racks includes a vertical support member and a plurality of wafer support arms. The plurality of wafer support arms extends from a sidewall of the vertical support member. Each of the wafer support arms includes a support body and a ledge. The support body is located between the vertical support member and the ledge. Centers of the support body and the ledge are horizontally aligned. A vertical thickness of the ledge is smaller than a vertical thickness of the support body.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.

There is provided a technique capable of uniformly supplying a gas with respect to a surface of a substrate when the substrate is processed. According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube; and a gas supply nozzle for supplying a gas to a substrate supported by a substrate support in the reaction tube along a direction parallel to a substrate surface. The gas supply nozzle is provided with a gas ejection port including an edge vicinity portion and a central portion defined along the direction parallel to the surface of the substrate. An opening dimension of the edge vicinity portion of the gas ejection port measured along a direction orthogonal to the direction parallel to the surface of the substrate is greater than an opening dimension of the central portion of the gas ejection port measured along the same direction.

A deposition method includes (a) forming a film including silicon (Si), oxygen (O), and nitrogen (N) on a substrate; and (b) supplying a plasma generating gas including Ar gas and exposing the substrate having the film formed thereon to a plasma generated from the plasma generating gas, wherein a concentration of the nitrogen in the film is adjusted by switching to including a nitriding gas in the plasma generating gas or switching to not including the nitriding gas in the plasma generating gas.

Provided is a filter device includes: a first coil group including a plurality of coils arranged along a central axis and spirally wound with a first inner diameter; and a second coil group including a plurality of coils arranged along the central axis and spirally wound with a second inner diameter larger than the first inner diameter. A pitch between respective turns of the plurality of coils of the second coil group is larger than a pitch between respective turns of the plurality of coils of the first coil group.

A gate valve provided in a boundary portion between two sections to block communication between the two sections, the gate valve includes a base, a first moving mechanism installed on the base and configured to move a first movement body along a first linear track, a second moving mechanism installed on the first movement body, and configured to operate at a timing different from the first moving mechanism and to move a second movement body along a second linear track orthogonal to the first linear track, and a valve body installed on the second movement body and configured to come into contact with a contact surface so as to perform sealing. One of the first linear track and the second linear track is parallel to a direction orthogonal to the contact surface.

According to an embodiment of the present invention, a substrate processing apparatus including: a chamber in which a process is performed on a substrate; a susceptor installed in the chamber to support the substrate; and a showerhead installed above the susceptor, and the showerhead includes: a plurality of inner injection holes defined in an inner area corresponding to a portion above the substrate and injecting a reaction gas downward; and a plurality of outer injection holes defined in an outer area corresponding to a portion outside the inner area and injecting an inert gas along an inner wall of the chamber.

There is provided a technique that includes: an exhauster including a casing in which a rotating body is installed; a gas supplier configured to supply an inert gas to the exhauster without passing through a process chamber; and a controller configured to be capable of controlling the gas supplier to supply the inert gas into the casing based on a temperature drop of the rotating body expected in advance in a state where a processing object is not being processed in the process chamber such that a temperature of the rotating body becomes equal to or higher than a target temperature.