A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

Embodiments of the present disclosure generally relate to apparatus and methods utilized in the manufacture of semiconductor devices. More particularly, embodiments of the present disclosure relate to a substrate processing chamber, and components thereof, for forming semiconductor devices.

A dielectric member that is attached to a lower surface of a stage is provided. The stage includes a base provided with a base channel through which a heat exchange medium passes. The dielectric member includes at least one first component including a passage that is connected to the base channel, and a second component surrounding the first component.

An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.

There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

Provided are an electrostatic chuck, which is manufactured to be reusable by removing a part of a dielectric layer except for a DC electrode and a heater electrode and depositing a new dielectric layer thereon, and a method for manufacturing the electrostatic chuck, and a substrate processing system including the electrostatic chuck. The method for manufacturing the electrostatic chuck includes, after using an electrostatic chuck, removing a portion of an upper part of a first dielectric layer of the electrostatic chuck where an electrode is not formed, depositing a second dielectric layer on the first dielectric layer from which the portion of the upper part has been removed, and patterning the second dielectric layer to enable reuse of the electrostatic chuck.

A rotation driving mechanism includes a turntable configured to rotate about a first axis, and a rotating plate disposed along a circumferential direction of the turntable and configured to rotate about a second axis independently of a rotation of the turntable. A driving plate is coaxially disposed with the first axis and is rotatable differently in rotational direction and rotational speed from the rotation of the turntable. A trajectory plate is fixed to the driving plate and disposed in the vicinity of the second axis of the rotating plate. The trajectory plate includes a rolling trajectory groove in a surface. The trajectory groove has a curved shape in a plan view. A horizontal rotating member is coupled to and fixed to the rotating plate and engaged with the rolling trajectory groove. The horizontal rotating member rotates the rotating plate by moving and rolling through the rolling trajectory groove.

There is provided a substrate processing apparatus including: an inner tube including a substrate accommodating region where substrates are accommodated along an arrangement direction; an outer tube outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at an end portion of the outer tube along the arrangement direction; and a gas guide controlling gas flow in an annular space between the inner and outer tubes. A first exhaust port A is located farthest from the second exhaust port, and faces a gas supply port A. The gas guide includes a fin provided near the gas supply port A and surrounds at least a part of an outer periphery of the gas supply port A.

Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.