An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.

An apparatus for manufacturing a display apparatus includes a deposition source, a nozzle head, a substrate fixer, and a deposition preventer. The deposition source is outside the chamber and vaporizes or sublimates a deposition material. The nozzle head is in the chamber, is connected to the at least one deposition source, and simultaneously sprays the deposition material onto an entire surface of a display substrate. The substrate fixer is connected to the chamber and moves linearly, with the display apparatus is mounted on the substrate fixer. The deposition preventer is in the chamber surrounding an edge portion of the nozzle head and an edge portion of the substrate fixer. The deposition preventer is heated during a deposition process.

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

A method deposits an epitaxial layer on a front side of a semiconductor wafer having monocrystalline material. The method includes: providing the semiconductor wafer; arranging the semiconductor wafer on a susceptor; heating the semiconductor wafer to a deposition temperature using thermal radiation directed to the front side and to the rear side of the semiconductor wafer; conducting a deposition gas over the front side of the semiconductor wafer; and selectively reducing an intensity of a portion of the thermal radiation that is directed to the rear side of the semiconductor wafer, as a result of which first partial regions at an edge of the semiconductor wafer, in the first partial regions a growth rate of the epitaxial layer is greater than in adjacent second partial regions given uniform temperature of the semiconductor wafer owing to an orientation of the monocrystalline material, are heated more weakly.

A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

A coating is deposited on a substrate in a CVD reactor that includes a process chamber and a gas inlet member with a first gas distribution chamber and a second gas distribution chamber separate from the first gas distribution chamber. To deposit heterostructures, in a first step, an inert or a diluent gas is fed into the first gas distribution chamber and a reactive gas containing the elements of a first coating is fed into the second gas distribution chamber. The reactive gas pyrolytically decomposes in the process chamber to form the first coating on the substrate. In a second step, a diluent gas is fed into the second gas distribution chamber and a reactive gas containing the elements of a second coating is fed into the first gas distribution chamber. The reactive gas or gas mixture decomposes in the process chamber to form the second coating on the substrate.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

Provided is an apparatus for treating a substrate. The apparatus for treating the substrate includes a chamber having an inner space, a support unit configured to support the substrate in the inner space, a gas supply tube configured to supply a gas onto the substrate supported on the support unit, a gas exhaust tube configured to exhaust the gas from the inner space, and a gas block connected to the gas supply tube and the gas exhaust tube and provided above the chamber.

Provided is a silica glass disc in which the deformation amount thereof in heat treatment is minimized, and the surface area of a silica glass surface can be increased. There is provided a silica glass disc, including a dimple forming area in which a large number of dimples are formed on at least one of a front surface or a back surface of a silica glass body, and the dimples in the dimple forming area are regularly formed. It is preferred that the dimples be formed by a laser.