A vacuum processing apparatus with excellent processing uniformity and capable of effectively performing routine and non-routine maintenance even when an object to be processed has an increased diameter is provided. In the vacuum processing apparatus having a vacuum transfer chamber, this apparatus comprises a lower vessel having a cylindrical shape, a sample stage unit including a sample stage and a ring-shaped sample stage base having support beams disposed axisymmetric with respect to a central axis of the sample stage, an upper vessel having a cylindrical shape, and a moving mechanism which is fixed to the sample stage base and is capable to move the sample stage unit movable in a vertical direction and in a horizontal direction.

A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.

A film forming apparatus and a film forming apparatus usage. The film forming apparatus has a film forming chamber, a substrate retaining part, a heating unit, a shower head, and a physical characteristics detector. The physical characteristics detector includes an irradiation part that irradiates a film formed on a surface of a substrate with a beam, a receiver to receive the beam reflected by the film, and a detection unit that detects physical characteristics of the film based on the beam received by the receiver. The shower head includes a supply plane facing the film forming plane, multiple discharge outlets provided in the supply plane, a main body to transport source gas to the multiple discharge outlets, a first transmissive part that transmits the beam emitted by the irradiation part, and a second transmissive part that transmits the reflected beam and is located at a different position than the first transmissive part.

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

An apparatus that performs a film forming process includes: a rotary table having one surface on which substrates are placed and for revolving the substrates around a rotary shaft; a vacuum container configured to accommodate the rotary table and configured such that a space formed between the vacuum container and the one surface is separated into a first processing region and a second processing region, and the substrates repeatedly and alternately pass through the first and second processing regions; a vacuum chuck mechanism provided in the rotary table and including suction ports opened to placement regions on which the substrates are placed, to suction and fix the substrates, and suction flow paths provided to communicate with the suction ports; and a switching mechanism configured to switch an operation status of the vacuum chuck mechanism between a full fixed state and a selective release state.

A deposition method includes preparing a substrate having an insulating film formed thereon, forming a first molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate while the substrate is heated to a first temperature, and forming a second molybdenum film on the first molybdenum film by supplying the molybdenum-containing gas and the reducing gas to the substrate while the substrate is heated to a second temperature that is higher than the first temperature.

A substrate processing apparatus includes: a rotary table provided in a processing container; a rotation mechanism configured to rotate the rotary table; recesses provided on an upper surface of the rotary table along a rotation direction of the rotary table and configured to accommodate substrates, respectively; a processing gas supply provided above the rotary table and configured to supply a processing gas onto the rotary table to process each of the substrates; a heater configured to heat the rotary table; a support configured to support the substrates in upper regions above the recesses so that the heater heats the substrates before being accommodated in the recesses; and an elevating mechanism configured to raise and lower the support relative to the rotary table so that the substrates are collectively moved from the upper regions into the recesses.

A substrate fixing device includes a base plate including therein a gas supply section, and an electrostatic chuck provided on the base plate. The electrostatic chuck includes a base having a mounting surface on which a target to be held by electrostatic attraction is mounted, an insertion hole, penetrating the base, having an inner surface that defines the insertion hole and is threaded to form a female thread, and a screw member, having an outer surface that is threaded to form a male thread, and inserted into the insertion hole to assume a mated state in which the male thread mates with the female thread. A gas from the gas supply section is supplied to the mounting surface via the screw member.

A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.