An epitaxial growth device is provided, which includes an induction coil and a reaction body, and the induction coil is disposed along a circumferential direction of the reaction body; and the reaction body includes a heating base and a plurality of trays, wherein the heating base includes a plurality of workspaces, the plurality of trays are disposed in the plurality of workspaces, respectively, and each of the plurality of trays is disposed in a corresponding workspace; wherein each of the plurality of trays is configured to support a substrate, and each of the plurality of trays is capable of independently rotating relative to the heating base.

An epitaxial growth device is provided, which includes an induction coil and a reaction body, and the induction coil is disposed along a circumferential direction of the reaction body; and the reaction body includes a heating base and a plurality of trays, wherein the heating base includes a plurality of workspaces, the plurality of trays are disposed in the plurality of workspaces, respectively, and each of the plurality of trays is disposed in a corresponding workspace; wherein each of the plurality of trays is configured to support a substrate, and each of the plurality of trays is capable of independently rotating relative to the heating base.

The system and method includes the suspension of a free-standing carbon article within a reaction chamber, the introduction of the chemical precursor in a reaction environment within the chamber, and heating of the carbon article in the presence of the chemical precursor leading to deposition in a site-specific manner.

A plasma processing apparatus including: a chamber configured to provide a space for processing a substrate; a substrate stage configured to support the substrate within the chamber and including a first electrode, the first electrode configured to receive a first radio frequency signal; a second electrode disposed on an upper portion of the chamber to face the first electrode, the second electrode configured to receive a second radio frequency signal; a gas supply unit configured to supply a process gas onto the substrate within the chamber; and a thermal control unit configured to circulate a heat transfer medium through a first fluid passage provided in the first electrode and a second fluid passage provided in the second electrode to maintain the first and second electrodes at the same temperature.

A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw material of the processing gas and the carrier gas flows therethrough; a concentration tank connected to a downstream of the mixed gas flow path, accommodating a porous member including a metal-organic framework; a desorption mechanism that desorbs the processing gas adsorbed to the porous member; and a concentration gas flow path that allows the processing gas desorbed from the porous member to flow to the chamber.

A substrate processing apparatus includes: a chamber; a raw material tank in which a raw material of a processing gas is accommodated; a carrier gas supply unit that supplies a carrier gas to the raw material tank; a mixed gas flow path connected to the raw material tank, and through which a mixed gas of the processing gas obtained from the raw material of the processing gas and the carrier gas flows therethrough; a concentration tank connected to a downstream of the mixed gas flow path, accommodating a porous member including a metal-organic framework; a desorption mechanism that desorbs the processing gas adsorbed to the porous member; and a concentration gas flow path that allows the processing gas desorbed from the porous member to flow to the chamber.

A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

A substrate carrier and a mechanism for moving the substrate carrier through a chemical vapor deposition system are provided. The substrate carrier includes a cylindrical housing having an interior surface. A plurality of plurality of shelves fixed to the interior surface, each shelf configured to support at least one substrate. The substrate carrier may include a connector configured to engage the substrate carrier with the mechanism. The mechanism may include a moveable arm and a motor configured to actuate the moveable arm. The moveable arm may include an actuating member connected to the motor and configured to move the moveable arm between a retracted state and an extended state. The moveable arm may be configured to operate in a chamber having a first pressure and a first temperature and the motor may be configured to operate in an environment having a second pressure.

Exemplary methods of forming a coating of material on a substrate may include forming a plasma of a first precursor and an oxygen-containing precursor. The first precursor and the oxygen-containing precursor may be provided in a first flow rate ratio. The methods may include depositing a first layer of material on the substrate. While maintaining the plasma, the methods may include adjusting the first flow rate ratio to a second flow rate ratio. The methods may include depositing a second layer of material on the substrate.