A method for making a monocrystalline structure is disclosed. The method includes depositing a first volume of a material on a substrate to create a first crystal seed and depositing a second volume of the material towards the substrate to nucleate with the first crystal seed to create a first initial epitaxial structure.

A processing apparatus for a thermal treatment of a workpiece is presented. The processing apparatus includes a processing chamber, a workpiece support disposed within the processing chamber, a gas delivery system, and radiative heat sources for heating the workpiece. The gas delivery system includes a gas showerhead assembly that is transparent to electromagnetic radiation emitted from the one or more radiative heat sources. The gas showerhead assembly includes one or more gas diffusion mechanisms to distribute gas within the enclosure.

A method is provided for growing a fiber structure, where the method includes: obtaining a substrate, growing an array of pedestal fibers on the substrate, growing fibers on the pedestal fibers, and depositing a coating surrounding each of the fibers. In another aspect, a method of fabricating a fiber structure includes obtaining a substrate and growing a plurality of fibers on the substrate according to 1½D printing. In another aspect, a multilayer functional fiber is provided produced by, for instance, the above-noted methods.

A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

An atomic layer deposition (ALD) apparatus includes a light source disposed at an upper portion of a section, a wafer supporting part disposed at a lower portion of the section, and a lens pocket between the light source and the wafer supporting part, and including a frame part and a transparent panel, the lens pocket including a pocket space having sides defined by the frame part and a bottom defined by the transparent panel.

Embodiments of the present disclosure generally relate to semiconductor processing, and specifically to methods and apparatus for surface modification of substrates. In an embodiment, a substrate modification method is provided. The method includes positioning a substrate within a processing chamber; and depositing a material on a portion of the substrate by a deposition process, wherein the deposition process comprises: thermally heating the substrate to a temperature of less than about 500° C.; delivering a first electromagnetic energy from an electromagnetic energy source to the substrate to modify a first region of the substrate, the first region of the substrate being at or near an upper surface of the substrate; and depositing a first material on the first region while delivering the first electromagnetic energy.

An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

An ALD apparatus includes a first process chamber configured to supply a first source gas and induce adsorption of a first material film. A second process chamber is configured to supply a second source gas and induce adsorption of a second material film. A third process chamber is configured to supply a third source gas and induce absorption of a third material film. A surface treatment chamber is configured to perform a surface treatment process on each of the first to third material films and remove a reaction by-product. A heat treatment chamber is configured to perform a heat treatment process on the substrate on which the first to third material films are adsorbed in a predetermined order and transform the first to third material films into a single compound thin film.

Embodiments of the disclosure are directed to index-gradient antireflective coatings that include a differential concentration of nanovoids versus thickness of the coating. In one embodiment, an index-gradient antireflective coating may have an index of refraction that varies from a first value to that of a second material. In another embodiment, the substrate may be optically transparent, and made of, for example, polymer, glass, or ceramics. The index-gradient antireflective coating can be fabricated using a non-uniform spin-coating process, by successive thermal evaporation, or by a chemical vapor deposition (CVD) process. In another embodiment, the spin-coating process can include multiple steps that include different concentrations of monomers to solvent, different spin-speeds, or different annealing times/temperatures. Similarly, the thermal evaporation can include multiple steps that include different concentrations of monomers, initiators, solvents, and associated processing parameters. Various other methods, systems, apparatuses, and materials are also disclosed.

Embodiments of the disclosure are directed to index-gradient antireflective coatings that include a differential concentration of nanovoids versus thickness of the coating. In one embodiment, an index-gradient antireflective coating may have an index of refraction that varies from a first value to that of a second material. In another embodiment, the substrate may be optically transparent, and made of, for example, polymer, glass, or ceramics. The index-gradient antireflective coating can be fabricated using a non-uniform spin-coating process, by successive thermal evaporation, or by a chemical vapor deposition (CVD) process. In another embodiment, the spin-coating process can include multiple steps that include different concentrations of monomers to solvent, different spin-speeds, or different annealing times/temperatures. Similarly, the thermal evaporation can include multiple steps that include different concentrations of monomers, initiators, solvents, and associated processing parameters. Various other methods, systems, apparatuses, and materials are also disclosed.