C23C16/48

FILM FORMATION APPARATUS AND METHOD OF USING THE SAME
20230203662 · 2023-06-29 ·

A film formation apparatus includes a stage for having a substrate thereon; a mist generation source that generates a mist of a solution containing at least water and in which a material for forming a film on the substrate is dissolved; a supply path that conveys the mist toward the substrate on the stage by a flow of a carrier gas; and a heater that heats at least a part of the supply path. The part of the supply path heated by the heater is provided as a mist heating section in which infrared rays are radiated from an inner surface of the supply path toward the mist. The inner surface of the supply path in the mist heating section is coated with a coating layer containing at least one of an oxide and a hydroxide of an element present in the mist.

Method for selectively depositing a layer on a three dimensional structure

A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.

Absorbing lamphead face

The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

Semiconductor device and manufacturing method thereof

A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having low off-state current (current in an off state) is provided. Alternatively, a semiconductor device including the transistor is provided. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film over the oxide semiconductor film, and a conductive film overlapping with the oxide semiconductor film with the first insulating film or the second insulating film provided between the oxide semiconductor film and the conductive film. The composition of the oxide semiconductor film changes continuously between the first insulating film and the second insulating film.

Quantum printing nanostructures within carbon nanopores

The invention includes apparatus and methods for instantiating and quantum printing materials, such as elemental metals, in a nanoporous carbon powder.

LASER TEXTURING SURFACE PREPARATION FOR PARYLENE COATING ADHESION
20170348466 · 2017-12-07 ·

A process for coating parylene onto a metal surface, such as a medical device, that has been textured by a series of laser pulses. The laser pulses can be overlapping or rastered. The textured portion of the metal surface and parylene coating can form a strong mechanical interlock. The bond created by using the laser texturing process can result in a cohesive failure of the parylene and not an adhesive failure of the bonding.

Method of preparing corrosion resistant coatings

A method for preparing thin double-structured composite corrosion resistant and/or passivating coatings that consist of a thin metal oxide-hydroxide subcoating prepared by anodizing the metal substrate materials near-surface part and then provided with an atomic layer deposition (ALD) topmost nanocoating, of e.g. oxide, nitride, carbonate, carbide etc. or their mixes or laminates, or laminates with ceramic and metallic layers, or laminates with inorganic or organic polymers and ceramic layers.

Method of preparing corrosion resistant coatings

A method for preparing thin double-structured composite corrosion resistant and/or passivating coatings that consist of a thin metal oxide-hydroxide subcoating prepared by anodizing the metal substrate materials near-surface part and then provided with an atomic layer deposition (ALD) topmost nanocoating, of e.g. oxide, nitride, carbonate, carbide etc. or their mixes or laminates, or laminates with ceramic and metallic layers, or laminates with inorganic or organic polymers and ceramic layers.

RADIATION SHIELD
20220375772 · 2022-11-24 ·

A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

ALD METHOD AND APPARATUS
20170342560 · 2017-11-30 ·

A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.