The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO.sub.2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.

A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape.

A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerhead positioned in the chamber the elongation in a direction along the tape; flowing gas from first and second elongated gas curtain shower heads on either side of the precursor showerhead; and illuminating the upper surface of the tape with illumination from sources on opposing sides of the reactor, the illumination sources positioned so as to allow illumination to pass under a respective one of the curtain shower heads and under the precursor showerhead to the upper surface of the tape.

The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.

A substrate processing apparatus that performs a film formation process on a substrate placed on one side of a rotary table includes: a main heating mechanism configured to heat the substrate; an auxiliary heating mechanism configured to adjust an intensity of light irradiated from the auxiliary heating mechanism in an inward/outward direction of the rotary table; a temperature measurement part configured to detect a temperature distribution of the substrate in the inward/outward direction of the rotary table; a position detection part configured to detect a position of the rotary table in a rotational direction of the rotary table; and a control part configured to control the intensity of the light irradiated from the auxiliary heating mechanism based on a temperature measurement data obtained by the temperature measurement part, a data corresponding to a target temperature distribution of the substrate, and a position detection value detected by the position detection part.

The invention provide a manufacturing method for producing conductive adhesive with spherical graphene, and the steps comprise as following: step 1: preparing monomer, initiator, a dispersing agent and solvent to manufacture a monomer compound, and use the monomer compound to produce polymer micro ball; step 2: heating pre-treatment or plasma etching pre-treatment to the said polymer micro ball; step 3: by chemical vapor deposition, the polymer micro ball after pre-treatment from step 2 to grow graphene outside surfaces or inside polymer micro ball, and then obtain the spherical graphene; step 4: producing epoxy gel system made by epoxy, hardener and accelerant with a certain ratio mixing homogeneously; step 5: dispersing the spherical graphene from step 3 into the epoxy gel system to produce pre-material of conductive adhesive of spherical graphene; Step 6: deforming the pre-material of conductive adhesive of spherical graphene, and then obtain conductive adhesive of spherical graphene.

The disclosed materials, methods, and apparatus, provide novel ultra-high temperature materials (UHTM) in fibrous forms/structures; such “fibrous materials” can take various forms, such as individual filaments, short-shaped fiber, tows, ropes, wools, textiles, lattices, nano/microstructures, mesostructured materials, and sponge-like materials. At least four important classes of UHTM materials are disclosed in this invention: (1) carbon, doped-carbon and carbon alloy materials, (2) materials within the boron-carbon-nitride-X system, (3) materials within the silicon-carbon-nitride-X system, and (4) highly-refractory materials within the tantalum-hafnium-carbon-nitride-X and tantalum-hafnium-carbon-boron-nitride-X system. All of these material classes offer compounds/mixtures that melt or sublime at temperatures above 1800° C.—and in some cases are among the highest melting point materials known (exceeding 3000° C.). In many embodiments, the synthesis/fabrication is from gaseous, solid, semi-solid, liquid, critical, and supercritical precursor mixtures using one or more low molar mass precursor(s), in combination with one or more high molar mass precursor(s). Methods for controlling the growth, composition, and structures of UHTM materials through control of the thermal diffusion region are disclosed.

A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.