A decorative component includes a plurality of metal finish layers deposited over a substrate and a plurality of sub-layers. The outermost metal finish layer is selectively deposited or removed to define one or more recesses to create different appearances of the component. The outer metal layer may undergo laser ablation to remove at least a portion of the outer layer while still exposing the outer layer in the area of removed material. The recess may extend fully through the outer layer to expose the underlying metal finish layer, and/or the recess may have a sloped bottom surface to define a gradient appearance. The outer layer may be applied over a mask that is applied to the underlying layer, such that the outer layer is selectively applied. The outer layer may be removed to expose the underlying finish layer without exposing a nickel sublayer and without requiring a top coat.

A decorative component includes a plurality of metal finish layers deposited over a substrate and a plurality of sub-layers. The outermost metal finish layer is selectively deposited or removed to define one or more recesses to create different appearances of the component. The outer metal layer may undergo laser ablation to remove at least a portion of the outer layer while still exposing the outer layer in the area of removed material. The recess may extend fully through the outer layer to expose the underlying metal finish layer, and/or the recess may have a sloped bottom surface to define a gradient appearance. The outer layer may be applied over a mask that is applied to the underlying layer, such that the outer layer is selectively applied. The outer layer may be removed to expose the underlying finish layer without exposing a nickel sublayer and without requiring a top coat.

The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass including quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.

The present disclosure relates to a quantum dot-doped glass and method of making the same. A quantum dot-doped glass includes glass including quantum dots in an internal structure of the glass. The quantum dots within the glass have a photoluminescence quantum yield of greater than or equal to 10%.

A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.

Methods for filling the gap of a semiconductor feature comprising exposure of a substrate surface to a precursor and reactant and an anneal environment to decrease the wet etch rate ratio of the deposited film and fill the gap.