A method and apparatus for reducing as-deposited and metastable defects relative to amorphous silicon (a-Si) thin films, its alloys and devices fabricated therefrom that include heating an earth shield positioned around a cathode in a parallel plate plasma chemical vapor deposition chamber to control a temperature of a showerhead in the deposition chamber in the range of 350° C. to 600° C. An anode in the deposition chamber is cooled to maintain a temperature in the range of 50° C. to 450° C. at the substrate that is positioned at the anode. In the apparatus, a heater is embedded within the earth shield and a cooling system is embedded within the anode.

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.

The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

Examples of a substrate treatment apparatus includes a chamber, a substrate support stage located inside the chamber, an elevation device that moves the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber that is adjacent to the chamber, and a chamber state controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to move the elevation device and the gate valve before a next substrate treatment is performed in the chamber, in a state in which no substrate is present in the chamber.

Examples of a substrate treatment apparatus includes a chamber, a substrate support stage located inside the chamber, an elevation device that moves the substrate support stage up and down, a gate valve provided between the chamber and an adjacent chamber that is adjacent to the chamber, and a chamber state controller including a processor and a memory configured to cause the processor to execute a program stored in the memory, or including a dedicated circuitry, to move the elevation device and the gate valve before a next substrate treatment is performed in the chamber, in a state in which no substrate is present in the chamber.

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices include integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Disclosed is a color emissive LED array having a substantially flat backplane which has circuitry. The color emissive LED array includes a plurality of multi thickness color emissive LED units disposed in an array on the substantially flat backplane; The plurality of multi thickness color emissive LED units have a thickness of the first color emissive LED unit is less than a thickness of the second color emissive LED unit and less than a thickness of the third color emissive LED unit. Meanwhile, the substantially flat backplane having circuitry has one or more anode and one or more cathode. Further, the array is attached to the substantially flat backplane having circuitry by using a jointing layer.